The optical absorption of indium-doped thin crystalline silicon films is
investigated for photon energies from 1.24 to 2.75 eV (450 to 1000 nm) by
transmittance measurements. It is found that the optical absorption coefficient of
indium-doped silicon films increases not only in the infrared region but also in the
visible region of the spectrum by increasing the concentration of indium
impurities below the solid solubility limit of about 1018 cm-3. It is also revealed that
this enhancement is more dominant when the sample is thinner than 10 µm.
These results imply that In doping is effective in increasing the optical absorption
of indirect-band-gap materials such as crystalline silicon.
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