The Ar ion beam etching (IBE) of InP has been studied in orded to clarify its applicability as a microfabrication technique for devices with submicron geometry such as integrated optics devices. The IBE rate has been determined as a function of ion energy, current density and angle of beam incidence. The crystalline quality of the etched surface has been investigated by electron beam diffraction, Rutherford backscattering and photoluminescence measurements. The etched surface has a polycrystalline phase and recovers to a single crystal after annealing at 500 C. Grating structures with a period of around 2600 A have been fabricated on an InP surface by the Ar-IBE combined with a holographic-photoresist-exposure technique.
The orotidine-5'-phosphate decarboxylase gene of Saccharomyces exiguus Yp74L-3 was cloned as a DNA fragment complementing a ura4 mutation of this yeast. The coding region of the gene is 807 bp in length, and represents 68.7% similarity to the corresponding gene of S. cerevisiae (URA3). The cloned URA4 gene was shown to be located on the 790-kbp Chromosome (chr) VIII of S. exiguus Yp74L-3. The neighbor-joining phylogenetic tree based on the orotidine-5'-phosphate decarboxylase coding sequences indicates that S. exiguus Yp74L-3 is closely related to Kluyveromyces yeasts, as well as to a S. cerevisiae laboratory strain.
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