Low temperature hermetic sealing methods that are tolerant to surface roughness are required for optoelectronic and MEMS devices. In this paper, a new bonding process based on a solid-state interdiffusion between Sn and Au at a bonding temperature lower than 200 °C using hydrogen radical treated Sn-3.0Ag-0.5Cu (wt%) solder was developed. This is a fluxless bonding technique. The Sn-Ag-Cu solder patterns using hydrogen radical reflow process were exposed to air and bonded with Au thin films without flux at temperatures below the melting point. Successful bonding was obtained at a bonding temperature above 150 °C for 10 min. The samples bonded at a bonding temperature of 170 °C under the application of a bonding pressure of 150 MPa showed leakage rates of less than 1.0 × 10 −9 Pa·m 3 s −1 .
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