Low-Temperature Solid-State Bonding Using Hydrogen Radical Treated Solder for Optoelectronic and MEMS Packaging

Higurashi, Eiji; Kawai, Hiromu; Suga, Tadatomo; Okada, Sakie; Hagihara, Taizoh

doi:10.1149/06405.0267ecst

Cited by 11 publications

(4 citation statements)

References 6 publications

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“…Low-temperature bonding based on solid-state interdiffusion between Sn and Au at a bonding temperature lower than 200 °C using a hydrogen-radical-treated Sn-3.0Ag-0.5Cu (wt %) solder without flux has been developed for potential application as hermetic packaging. 51) Although low-temperature Au-Au SAB has been reported for hermetic packaging, 52) it typically requires a smooth bonding surface. Lowtemperature solid-state bonding using a soft solder is also a potential candidate since it is tolerant to surface roughness.…”

Section: Snagcu Solder Bonding For Sealing Applicationmentioning

confidence: 99%

Heterogeneous integration based on low-temperature bonding for advanced optoelectronic devices

Higurashi

2018

Jpn. J. Appl. Phys.

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Heterogeneous integration is an attractive approach to manufacturing future optoelectronic devices. Recent progress in low-temperature bonding techniques such as plasma activation bonding (PAB) and surface-activated bonding (SAB) enables a new approach to integrating dissimilar materials for a wide range of photonics applications. In this paper, low-temperature direct bonding and intermediate layer bonding techniques are focused, and their state-of-the-art applications in optoelectronic devices are reviewed. First, we describe the room-temperature direct bonding of Ge/Ge and Ge/Si wafers for photodetectors and of GaAs/SiC wafers for high-power semiconductor lasers. Then, we describe low-temperature intermediate layer bonding using Au and lead-free Sn-3.0Ag-0.5Cu solders for optical sensors and MEMS packaging.

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Section: Snagcu Solder Bonding For Sealing Applicationmentioning

confidence: 99%

Heterogeneous integration based on low-temperature bonding for advanced optoelectronic devices

Higurashi

2018

Jpn. J. Appl. Phys.

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“…Solder bonding methods using SnPb solder, Pb-free solder and copper pillars are applied early in the solder bump connection of the flip-chip packaging. For higher high-temperature stability and finer-pitch interconnects, solid–liquid interdiffusion (SLID) (including Cu-Sn [Bosco and Zok, 2004; Bosco and Zok, 2005; Duan et al , 2015; Luu et al , 2013]) and solid–state diffusion bonding (including lead-free solder, Au-Sn [Wang et al , 2007] and Sn-Ag-Cu [Higurashi et al , 2014]) methods have been developed. Considering better anti-electromigration, electrical and thermal performance, copper direct bonding draws lots of attention.…”

Section: Introductionmentioning

confidence: 99%

Recent progress on bumpless Cu/SiO₂ hybrid bonding for 3D heterogeneous integration

Kang

Niu

et al. 2022

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Purpose Bumpless Cu/SiO2 hybrid bonding, which this paper aims to, is a key technology of three-dimensional (3D) high-density integration to promote the integrated circuits industry’s continuous development, which achieves the stacks of chips vertically connected via through-silicon via. Surface-activated bonding (SAB) and thermal-compression bonding (TCB) are used, but both have some shortcomings. The SAB method is overdemanding in the bonding environment, and the TCB method requires a high temperature to remove copper oxide from surfaces, which increases the thermal budget and grossly damages the fine-pitch device. Design/methodology/approach In this review, methods to prevent and remove copper oxidation in the whole bonding process for a lower bonding temperature, such as wet treatment, plasma surface activation, nanotwinned copper and the metal passivation layer, are investigated. Findings The cooperative bonding method combining wet treatment and plasma activation shows outstanding technological superiority without the high cost and additional necessity of copper passivation in manufacture. Cu/SiO2 hybrid bonding has great potential to effectively enhance the integration density in future 3D packaging for artificial intelligence, the internet of things and other high-density chips. Originality/value To achieve heterogeneous bonding at a lower temperature, the SAB method, chemical treatment and the plasma-assisted bonding method (based on TCB) are used, and surface-enhanced measurements such as nanotwinned copper and the metal passivation layer are also applied to prevent surface copper oxide.

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“…An effective way to achieve sealing is to bond cap wafers to device wafers. Many types of bonding techniques such as anodic bonding [4], thermocompression bonding [5][6][7], solder bonding [8,9], and eutectic bonding [10] have been used as sealing techniques. However, these techniques require high bonding temperature, which causes problems such as thermally induced mechanical stress due to thermal expansion mismatch.…”

Section: Introductionmentioning

confidence: 99%

Effect of Au Film Thickness and Surface Roughness on Room-Temperature Wafer Bonding and Wafer-Scale Vacuum Sealing by Au-Au Surface Activated Bonding

et al. 2020

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Au-Au surface activated bonding (SAB) using ultrathin Au films is effective for room-temperature pressureless wafer bonding. This paper reports the effect of the film thickness (15–500 nm) and surface roughness (0.3–1.6 nm) on room-temperature pressureless wafer bonding and sealing. The root-mean-square surface roughness and grain size of sputtered Au thin films on Si and glass wafers increased with the film thickness. The bonded area was more than 85% of the total wafer area when the film thickness was 100 nm or less and decreased as the thickness increased. Room-temperature wafer-scale vacuum sealing was achieved when Au thin films with a thickness of 50 nm or less were used. These results suggest that Au-Au SAB using ultrathin Au films is useful in achieving room-temperature wafer-level hermetic and vacuum packaging of microelectromechanical systems and optoelectronic devices.

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Low-Temperature Solid-State Bonding Using Hydrogen Radical Treated Solder for Optoelectronic and MEMS Packaging

Cited by 11 publications

References 6 publications

Heterogeneous integration based on low-temperature bonding for advanced optoelectronic devices

Heterogeneous integration based on low-temperature bonding for advanced optoelectronic devices

Recent progress on bumpless Cu/SiO₂ hybrid bonding for 3D heterogeneous integration

Effect of Au Film Thickness and Surface Roughness on Room-Temperature Wafer Bonding and Wafer-Scale Vacuum Sealing by Au-Au Surface Activated Bonding

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Low-Temperature Solid-State Bonding Using Hydrogen Radical Treated Solder for Optoelectronic and MEMS Packaging

Cited by 11 publications

References 6 publications

Heterogeneous integration based on low-temperature bonding for advanced optoelectronic devices

Heterogeneous integration based on low-temperature bonding for advanced optoelectronic devices

Recent progress on bumpless Cu/SiO2 hybrid bonding for 3D heterogeneous integration

Effect of Au Film Thickness and Surface Roughness on Room-Temperature Wafer Bonding and Wafer-Scale Vacuum Sealing by Au-Au Surface Activated Bonding

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Recent progress on bumpless Cu/SiO₂ hybrid bonding for 3D heterogeneous integration