Surface morphology of TiN films reactively deposited by bias sputtering

Takahashi, T.; Masugata, Katsumi; Kawai, Hiromu; Kontani, S; Yamamoto, J

doi:10.1016/s0042-207x(00)00347-x

Cited by 10 publications

(4 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1,2 Nevertheless, their principal application is in semiconductor technology because of their low electrical resistivity, their high thermal stability and their ability to be used as diffusion barriers. 3 For example, they are widely used to prevent aluminium/silicon interdiffusion in multilayers. 4,5 However, the range of potential TiN applications is closely related to the impurities present in the films and thus to their preparation and deposition conditions.…”

Section: Introductionmentioning

confidence: 99%

Nitrogen plasma pressure influence on the composition of TiN_xO_y sputtered films

Guillot

Jouaiti²,

Imhoff

et al. 2002

Surface & Interface Analysis

View full text Add to dashboard Cite

Thin films of TiN x O y were deposited by d.c. magnetron sputtering on glass substrates using an (Ar + ,N 2 ) plasma and Ti target. The N 2 partial pressure was changed from 2.3 × 10 −4 mbar to 4.6 × 10 −3 mbar in order to obtain films with increasing nitrogen contents. X-ray photoelectron spectroscopy was used to determine the as-deposited composition. The presence of oxygen, which is probably due to contamination from the residual atmosphere in the vacuum chamber, is always detected, both in the surface layers and in the bulk of the films, confirming the formation of TiN x O y . When the nitrogen partial pressure was increased, a maximum for the nitrogen content in the films was reached, corresponding to a TiN 0.8 O 0.4 film composition. The nitrogen content of the films did not increase further for higher N 2 partial pressures. X-ray diffraction showed that each deposited layer had a rock salt structure, isomorphic to that for TiN, in which some nitrogen atoms would seem to be substituted by oxygen atoms in the anionic sub-lattice. Moreover, this crystalline TiN x O y phase is super-stoichiometric with this deposition method. To the best of our knowledge such results have already been observed on TiN films but it is the first time that they have been presented for TiN x O y thin layers.

show abstract

Section: Introductionmentioning

confidence: 99%

Nitrogen plasma pressure influence on the composition of TiN_xO_y sputtered films

Guillot

Jouaiti²,

Imhoff

et al. 2002

Surface & Interface Analysis

View full text Add to dashboard Cite

show abstract

“…But for samples prepared at biases between -100 to -250 V, the hardness is more than that of the bulk TiN and the maximum hardness (3300 kg/mm 2 ) is obtained at a bias voltage of -250 V. The ion current was of the order of ~ 1 mA/cm 2 under these conditions. Results reported in the literature (Takahashi et al 2000;Zhengyang et al 2000) also indicate increase in the hardness of the TiN coatings with an increase in negative substrate bias and these are listed in table 1. The nanoindentation results of the present study are similar to those reported by Chou et al (2001) and Wang et al (2001), who report a nanoindentation hardness of 3000-3200 kg/ mm 2 for TiN coatings deposited on silicon substrates.…”

Section: Resultsmentioning

confidence: 80%

“…Also, it is well known that ion bombardment of the growing TiN film modifies the microstructure of the coatings significantly (Hultman et al 1987). In general, to enhance the mechanical properties of TiN coatings, a negative bias voltage (V B ) is applied to the substrate during deposition (Takahashi et al 2000;Zhengyang et al 2000;Zhitomirsky et al 2000).…”

Section: Introductionmentioning

confidence: 99%

Nanoindentation and atomic force microscopy measurements on reactively sputtered TiN coatings

Barshilia

Rajam

2004

Bull Mater Sci

View full text Add to dashboard Cite

Titanium nitride (TiN) coatings were deposited by d.c. reactive magnetron sputtering process. The films were deposited on silicon (111) substrates at various process conditions, e.g. substrate bias voltage (V B ) and nitrogen partial pressure. Mechanical properties of the coatings were investigated by a nanoindentation technique. Force vs displacement curves generated during loading and unloading of a Berkovich diamond indenter were used to determine the hardness (H) and Young's modulus (Y) of the films. Detailed investigations on the role of substrate bias and nitrogen partial pressure on the mechanical properties of the coatings are presented in this paper. Considerable improvement in the hardness was observed when negative bias voltage was increased from 100-250 V. Films deposited at |V B | = 250 V exhibited hardness as high as 3300 kg/mm 2 . This increase in hardness has been attributed to ion bombardment during the deposition. The ion bombardment considerably affects the microstructure of the coatings. Atomic force microscopy (AFM) of the coatings revealed fine-grained morphology for the films prepared at higher substrate bias voltage. The hardness of the coatings was found to increase with a decrease in nitrogen partial pressure.

show abstract

“…It was revealed that the surface pattern of sputtered TiAlN coating effectively reduced the adhesive and abrasive wear at elevated temperatures [2]. Furthermore, the best tribology and mechanical properties of sputtered TiAlN coatings were attributed to its surface roughness and texture [3][4][5]. The surface morphology of the sputtered TiAlN coating also relates to other properties such as crystal structure and composition [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Surface Morphology of Sputtered Titanium-Aluminum-Nitride Coatings

Budi

Razali

Nizam

2020

SPEKTRA

View full text Add to dashboard Cite

A study on the surface morphology of sputtered TiAlN coatings is presented. The coatings were deposited by DC magnetron sputtering on tungsten carbide insert tools. The surface morphology was characterized by using Atomic Force Microscopy (AFM), and the surface roughness was indicated by RMS roughness value. It was observed that the TiAlN coating surface morphology was rough as the negative substrate bias and nitrogen flow rate are increased. The evolution of the sputtered TiAlN coatings surface morphology was due to the competition between particle diffusion and re-scattering effect during the sputtering process. At high negative substrate bias and nitrogen flow rate, the re-scattering effect was prominent, leading to the high roughness of the sputtered TiAlN coating surface.

show abstract

Surface morphology of TiN films reactively deposited by bias sputtering

Cited by 10 publications

References 4 publications

Nitrogen plasma pressure influence on the composition of TiN_xO_y sputtered films

Nitrogen plasma pressure influence on the composition of TiN_xO_y sputtered films

Nanoindentation and atomic force microscopy measurements on reactively sputtered TiN coatings

Surface Morphology of Sputtered Titanium-Aluminum-Nitride Coatings

Contact Info

Product

Resources

About

Surface morphology of TiN films reactively deposited by bias sputtering

Cited by 10 publications

References 4 publications

Nitrogen plasma pressure influence on the composition of TiNxOy sputtered films

Nitrogen plasma pressure influence on the composition of TiNxOy sputtered films

Nanoindentation and atomic force microscopy measurements on reactively sputtered TiN coatings

Surface Morphology of Sputtered Titanium-Aluminum-Nitride Coatings

Contact Info

Product

Resources

About

Nitrogen plasma pressure influence on the composition of TiN_xO_y sputtered films

Nitrogen plasma pressure influence on the composition of TiN_xO_y sputtered films