We report on the electrical properties of AlGaN/GaInN heterostructures fabricated with various InN molar fractions from 0 to 0.60 in GaInN on a GaN template. The sheet carrier density of the AlGaN/GaInN heterostructure monotonically increased with increasing InN molar fraction in GaInN, reaching 5.0 Â 10 13 cm À2 at an InN molar fraction of 0.60. The Al 0.30 Ga 0.70 N/Ga 0.40 In 0.60 N heterostructure exhibited static field-effect transistor (FET) characteristics.

We fabricated and characterized nonpolar a-plane AlGaN/GaN heterostructure field-effect transistors (HFETs) grown on an a-plane freestanding GaN substrate. By optimizing the growth conditions, the unintentionally doped oxygen concentration was much reduced in the a-plane GaN buffer layer. As a result, the low leakage current in the buffer layer was realized without doping of deep acceptors, such as Fe and C, by which an impurity-contamination-free channel layer can be successfully grown. A maximum drain current of 220 mA/mm at a gate source voltage of +3.0 V, an on resistance of 10.4 mΩ·cm2, and a threshold voltage of -1.6 V were realized.

We report on the electrical properties of AlInN/GaInN heterostructures fabricated with InN molar fractions of 0 to 0.6 in the GaInN layer. High‐density two‐dimensional electron gases are formed near the interfaces of AlInN/AlN/GaInN at InN molar fractions of 0.3 and 0.6. The Al0.82In0.18N/AlN/Ga0.4In0.6N/GaN heterostructure field‐effect transistors exhibited static characteristics. The maximum drain‐source current reached a value of 0.26 A/mm (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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