AlGaN/GaInN/GaN heterostructure field‐effect transistor

Ikki, Hiromichi; Isobe, Yasuhiro; Iida, Daisuke; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi; Bandoh, Akira; Udagawa, T.

doi:10.1002/pssa.201001153

Cited by 13 publications

(11 citation statements)

References 9 publications

(9 reference statements)

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“…Recently, there have been several attempts to employ InGaN as a channel in AlGaN-based and InAlN-based HEMTs. [8][9][10][11][12] In these structures, the GaN buffer layer below the InGaN channel served as a natural back-barrier and improved electron confinement as verified by capacitance-voltage measurements. 8,11 However, all the HEMT structures with InGaN channel synthesized so far exhibited high sheet resistance due to either low mobility or low carrier density.…”

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confidence: 91%

“…3(a) similar to observations from AlGaN-based structures. 10,11 A record high electron mobility of 1290 cm 2 /VÁs was obtained for the HEMT structure with InN molar fraction of 0.05. In spite of higher sheet charge density in our structures, the electron mobility was higher than that in the AlGaN structures 8,9,11 within the entire In x Ga 1-x N compositional range 0 x 0.1.…”

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confidence: 94%

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InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition

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Cao

Johnson

et al. 2012

Applied Physics Letters

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High electron mobility transistor (HEMT) structures of AlInGaN/AlN/InGaN/GaN were grown by metal-organic chemical vapor deposition. A combination of low growth rate and high growth temperature during synthesis of the InGaN channel layer led to significant improvement in HEMT electron transport properties. The improvement was correlated with an evolution of both surface roughness and photoluminescence intensity of InGaN. Record electron mobilities from 1070 to 1290 cm 2 /VÁs with associated sheet charge density of $2 Â 10 13 cm À2 were obtained across the In x Ga 1-x N channel composition range x ¼ 0.05 to 0.10. V

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confidence: 91%

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confidence: 94%

InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition

Laboutin

Cao

Johnson

et al. 2012

Applied Physics Letters

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“…However, it is difficult to obtain a thick InGaN film with a higher surface quality . Indium atoms with larger radii may cause the structural disorder of bond length and angle, which is enhanced as the thickness increases …”

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confidence: 99%

Growth of AlGaN/InGaN/GaN Heterostructure on AlN Template/Sapphire

Sumiya

Kindole

Fukuda

et al. 2019

Physica Status Solidi (b)

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GaN films are grown directly on AlN templates/sapphire substrates without using low‐temperature (LT) buffer layers by metalorganic chemical vapor deposition. AlN templates are complimentarily deformed at the initial growth of GaN, adjusting the a‐lattice constant and tilting crystal orientation slightly. Compared with the film on sapphire substrates using an LT buffer layer, the GaN on the AlN template forms a smoother surface and has better crystalline quality after a shorter growth time at a lower temperature. Higher‐quality InGaN films on the GaN/AlN template are subsequently grown to optimize the thickness exhibiting the minimum Urbach energy which is evaluated by photothermal deflection spectroscopy. A high‐quality AlGaN/InGaN heterostructure is fabricated in which the Shubnikov–de Haas oscillation can be clearly observed from the electron gas of the InGaN channel at the interface.

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“…[2][3][4][5] Recently, heterostructures with an InGaN channel were reported as promising candidates in HEMT fabrication owing to their superiority with respect to the traditional GaN-channel structures. [6][7][8][9][10][11][12][13][14][15][16][17] The carriers in the InGaN channel have a higher steady-state peak drift velocity owing to the lower electron effective mass, 18) which is beneficial to improve the high-frequency operations. Insertion of an InGaN channel between the wide-band-gap barrier (AlN, AlGaN, or InAlN) and GaN buffer layers achieves the design of double heterostructure, which is an effective approach to enhance the confinement of the two-dimensional electron gas (2DEG).…”

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confidence: 99%

InGaN-channel high-electron-mobility transistor with enhanced linearity and high-temperature performance

Zhang

Zhou

et al. 2018

Appl. Phys. Express

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High-performance InGaN-channel high-electron-mobility transistors (HEMTs) are fabricated and investigated in detail. The transconductance exhibits a high stability over a wide range of gate voltages, indicating excellent operation linearity. The relative saturation output current densities are 81 and 68% when the temperature increases to 400 and 500 K, respectively, with respect to the value of 1128.2 mA/mm at 300 K. In addition, the breakdown voltage reaches 187 V at 300 K, which is comparable to that of a GaN-channel HEMT. The presented results demonstrate the large potentials of the InGaN-channel HEMT in high-frequency power applications.

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AlGaN/GaInN/GaN heterostructure field‐effect transistor

Cited by 13 publications

References 9 publications

InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition

InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition

Growth of AlGaN/InGaN/GaN Heterostructure on AlN Template/Sapphire

InGaN-channel high-electron-mobility transistor with enhanced linearity and high-temperature performance

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