Fabrication of AlInN/AlN/GaInN/GaN heterostructure field‐effect transistors

Abstract

We report on the electrical properties of AlInN/GaInN heterostructures fabricated with InN molar fractions of 0 to 0.6 in the GaInN layer. High‐density two‐dimensional electron gases are formed near the interfaces of AlInN/AlN/GaInN at InN molar fractions of 0.3 and 0.6. The Al0.82In0.18N/AlN/Ga0.4In0.6N/GaN heterostructure field‐effect transistors exhibited static characteristics. The maximum drain‐source current reached a value of 0.26 A/mm (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)