A ratio based hot-carrier degradation model for aged timing simulation of large CMOS circuits is presented. The model introduces gate-level representation and simply uses timing information.The proposed model is implemented in the prototype simulator in which the aged timing is obtained from the fresh timing and the precharacterized ratio. The simulated results show that the simulation can be performed at the size and speed of logic simulation with comparable accuracy of transistor-level simulator BTABERT.

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Gate level circuit simulation on hot carrier degradation is introduced for the first time by the GLACIER system presented in this paper. The inherent advantages such as high speed and high capacity of the gate level simulation as compared to the traditional transistor level hot carrier simulation makes the design-in reliability simulation possible and practical for the deep submicron VLSI circuit designs with millions of transistors. By virtue of a unique ratio based modeling technique. GLACIER system provides a very high accuracy which is mostly within 1% difference of transistor level hot carrier simulation.

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Propagation characteristics of optically coupled dielectric waveguides including active and passive waveguides are studied in terms of scalar and vector field finite element methods. First, characteristics of couplings for asymmetric passive waveguides, i.e., modal dispersions and field distributions, are obtained using a vector field finite element method. Second, a scalar field finite element method is applied to active coupled slab waveguides, and modal propagation characteristics, i.e., dispersion relationships, modal gains, phase characteristics, and electromagnetic field distributions, are investigated in detail. Characteristics depending on parameters such as gain, symmetrical conditions of waveguides, and numbers of waveguides are obtained. As a result, weak coupling phenomena due to unequal gains are observed and it is found that a modal gain depends on optical power confinement factors. In this paper only TM modes are treated, but our method can be used to obtain TE modes.