the signal readout circuitry with decreased supply voltage of 3.3 V, the fill factor, the conversion gain and the readout gain were all improved from the previous chip and an eight times higher light sensitivity and a 50 % decrease of power consumption were achieved simultaneously. The impact of the performance improvements was confirmed to be significant based on the captured movie video of UHS phenomena.

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In this paper, the ultra-high speed (UHS) video capturing results of time dependent dielectric breakdown (TDDB) of MOS capacitors using the UHS camera with the maximum frame rate of 10M frame per second (fps) are reported. In order to capture the breakdown, we set a trigger circuit which detects the rapid current increase through the MOS capacitor. Some movies have succeeded to capture the intermittent light emissions on some points of the gate during the breakdown. From the movies taken at 100K to 1M fps, the distribution centers of the light emission time and the period were 10 sec and 30 sec, respectively. From the movies taken at 10M fps, the light emission time and the period were less than 10 sec. The random failure mode has higher percentage of single light emissions than that of the wear-out failure mode, indicating a correlation between of the light emission mode and the TDDB failure mode.

Dynamic visualization results of 100 nm-thick oxide breakdown are demonstrated in this work realized by the ultrahigh speed video capturing with a frame rate of up to 10M frameper-second. The correlation of the time-dependent-dielectricbreakdown failure mode and light emission mode are confirmed.