This review describes the characteristics of dislocations in dislocation arrays and grain boundaries as they appear in imperfect and polycrystalline semiconductors. To further the understanding of the electronic features of these structures, metallurgical and crystallographic aspects of grain boundaries are reviewed. Grain-boundary diffusion is discussed as part of the metallurgy of bicrystal interfaces. Carrier transport at grain boundaries is described as it has been developed from the studies on germanium and III-V-compound bicrystals. Important features are lateral blocking layers, longitudinal or sheet conduction, space-charge extension with lateral bias, recombination and photovoltaic effects. Attention is focused on the activity to understand grain-boundary effects in silicon and their influence on electronic materials properties, a research area of particular importance during recent years. The application of silicon polycrystals in solar cells and in microcircuitry in the form of polycrystalline thin films has enhanced the understanding of dislocations and grain boundaries as they are considered here. Propositions for future research conclude this review.
Correlation between the electronic structures and diffusion paths of. 1 Oct 2014. The electronics and semiconductor industries rely heavily on failure and defect analysis to maximize productivity and minimize expensive Defect Electronics in Semiconductors: Herbert F. Matare Gettering and Defect Engineering in Semiconductor Technology. Defect Tolerant Semiconductors for Solar Energy Conversion-The. Point Defects in Semiconductors and Insulators: Determination of.-Google Books Result The elucidation of the effects of structurally extended defects on electronic properties of materials is especially important in view of the current advances in. Georg-August-Universität Göttingen-EDS2014 Fundamental aspects and technological problems associated with defects in devices and materials ranging from micro-and nano-electronics to power. Damage-free failure/defect analysis in electronics and. 13 Mar 2014. where he studies the electronic structure of CuInS2 by means of Many Body Defect tolerance is the tendency of a semiconductor to keep its Defect electronics in semiconductors. Author/Creator: Mataré, Herbert F. Herbert Franz Language: English. Imprint: New York, Wiley-Interscience 1971 Nanostructured Semiconductor Oxides for the Next Generation of.-Google Books Result This page contains materials for the session on semiconductors. such as crystal vacancies and defects Session 19 and chemical reaction kinetics Session Point defects ionic crystals Electronic defects in semiconductors Herbert Mataré's Defect Electronics in Semiconductors Wiley-Interscience Series Dr. R.K. Mueller of Bendix, R. Maddox, Dr. H. Lotsch, Dr. S. Soclof on Invited speakers ICDS 2015 Electronic properties of heterostructures and defects in compound. Defect Control in Semiconductors-Google Books Result Chapter 2. Defects in Semiconductors. A defect-free semiconductor crystal is of little use in modern electronics. The use of elemental or compound The electronic structure of complex defects, in particular their bound excitons, is discussed for neutral "isoelectronic" complexes as well as donors and acceptors. Defect Electronics in Semiconductors: Herbert F. Matare: Free REVIEW The role of defects as essential entities in semiconductor materials is. with semiconductors were hampered by the extreme sensitivity of the electronic 14. Semiconductors Electronic Materials Introduction to Solid The 17th International Conference on Extended Defects in Semiconductors was held. Electronic structure of defects Defect engineering, strain engineering ?Charge carrier statistics of semiconductors containing defects with.. of semiconductors containing defects with negative electronic correlation energy the neutrality equation of a semiconductor containing positive or negativeU Defects in Semiconductors Defect Electronics in Semiconductors Herbert F. Matare on Amazon.com. *FREE* shipping on qualifying offers. Electronic structure of complex defects in semiconductors from. Dopants and Defects in Semiconductors-CRC Press Book. Discusses the electronic, vibrational, optical...
Recent research on silicon grain boundaries has confirmed the typical features known from earlier work on grain boundaries in germanium and III-V compound semiconductors. However, there is less clarity with respect to the role of the ‘‘dangling bonds’’ when testing for electrical activity. In silicon a pronounced double barrier with its space-charge layer and a low leakage current rarely forms. Here the Cottrell atmospheres in conjunction with impurity complexes such as SiO, SiO2, and SiO4 can strongly influence the electrical properties in a material with an exceptionally high self-diffusivity. Conditions for the measurability of the longitudinal impurity band-type conduction through space-charge layers in silicon grain boundaries are outlined. It is concluded that in those cases where electrical activity is measured, the conduction parallel to the grain-boundary plane should be apparent for pure material and at low temperature. Experiments are proposed to further our understanding of the properties of grain boundaries in silicon.
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