Rectifying Semi-Conductor Contacts

Henisch, H.K.; Mataré, Herbert F.

doi:10.1149/1.2428787

Cited by 29 publications

(18 citation statements)

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“…The films exhibited ohmic resistance at low voltage and exponential rise in current at higher voltages agreeing with Holm's [ll] predictions for tunneling in vacuum. Of some significance is the fact that at low temperatures the current increases when the oxidized electrode is negative, in agreement with the tunneling mechanism of Wilson [12]. At higher temperatures the Schottky space-charge barrier mechanism 1121 takes over and the easy direction of current flow occurs when the oxidized metal is positive.…”

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confidence: 73%

A Survey of Conducton Mechanisms in Very Thin Films

Bashara

1964

IEEE Trans. Comp. Parts

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This survey deals with conduction mechanisms in ,thin ~%ns, both metals and dielectrics, in the thickness range 'between 1O-6 and 10m6 cm and generally under 2-3 X 10vB cm. Conduction in metals with an island structure is discussed in terms of a thermally-activated process based on a model suggested by Frenkel. The model makes it possible to interpret the behavior qualitatively.Dielectrics exhibit a tunneling-like behavior and/or a Schottky-like behavior depending on thickness and temperature. Anom~>lous effects such as the negative resistance sandwich structure and gap structures with low work functions are also discussed. A= E := e := J := ]c := P := T := u := 4 := SYMBOLS 120 amp/cm" degree' = Richardson's constant E,+, = the so-called dielectric constant, where E,, = 8.854 X 10-l' farad/meter and G = the relative dielectric constant 2.32, written exp amperes/cm' = current density Boltzmann's constant = 1.38 X 10mZ3 joule/degree electronic charge = 1.6 X 10-l' coulomb temperature in degrees Kelvin conductance (ohms-') work function (volts)IHIS SURVEY will be restricted generally to films less than 2-3 X 10d6 cm in thickness. It will deal with metal films which consist of discrete islands, dielectrics and various anomolous effects including thin metal films which have gross discontinuities compared to th'eir thickness, the latter being the only departure from 'emphasis on very thin films.Pri:mary technological interest in very thin films arises from the potential of obtaining cold emission devices cons&ing of a metal-dielectric-metal sandwich structure. In such an application the dielectric and the top (emitting) metal electrode must lie within a critical thickness range.The survey will be concerned primarily with developing mode;.s which are useful in interpreting the phenomena a,nd citing representative work, rather than merely cataloging test results. MsmrscriptThe negative temperature coefficient (T.C.) of resistance of metallic films below a certain thickness is well established experimentally. Also, there appears to be little doubt that where a negative T.C. is observed the film consists of discontinuous islands of material. The microphysical basis for the decrease in resistance with temperature is not well understood, althoug:h a number of models have been suggested.The writer has chosen to use a model formulated by Frenkel [l] in connection with dielectric breakdown. Since the article is in Russian, the essential features are discussed in the Appendix, where it is seen tha,t, using classical ideas, the electron must have an energy equal to or greater than that given by (17) to escape from the parent ion.Eq. (17) can be applied to the case of a thin metal film consisting of separated islands of metal by defining the symbols a and E to apply to the problem.Assume that the islands are circular discs with a radius a and negligible thickness. The symbol E is defined to be the electric field between islands which are separated by a distance d. To a first approximation 15 will be given by the ratio of V/d whe...

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A Survey of Conducton Mechanisms in Very Thin Films

Bashara

1964

IEEE Trans. Comp. Parts

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“…Upon initial observation of the increase in leakage current with voltage, we hypothesized that the effect might be explained by a textbook effect known as ''Schottky barrier lowering'' [12,13]. This is the lowering of the charge injection barrier by an applied electric field.…”

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Amorphous germanium contacts on germanium detectors

Hull

Pehl

2005

Nuclear Instruments and Methods in Physics Research Section A:

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“…One of the first to address the problem of tip injection was Henisch in 1957 (Ref. 6) and later Lampert in 1970. 7 Lampert dealt specifically with the problem of two spherical concentric electrodes with the smaller radius electrode representing the injector tip.…”

Section: Introductionmentioning

confidence: 99%

The theoretical current-voltage dependence of a non-degenerate disordered organic material obtained with conductive atomic force microscopy

Woellner

Freire²,

Guide³

et al. 2011

The Journal of Chemical Physics

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We develop a simple continuum model for the current voltage characteristics of a material as measured by the conducting atomic force microscopy, including space charge effects. We address the effect of the point contact on the magnitude of the current and on the transition voltages between the different current regimes by comparing these with the corresponding expressions obtained with planar electrodes.

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Rectifying Semi-Conductor Contacts

Abstract: not Available.

Cited by 29 publications

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A Survey of Conducton Mechanisms in Very Thin Films

A Survey of Conducton Mechanisms in Very Thin Films

Amorphous germanium contacts on germanium detectors

The theoretical current-voltage dependence of a non-degenerate disordered organic material obtained with conductive atomic force microscopy

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