Halbleiterbauelemente, vol. 1, semiconductors and semiconductor diodes

Mataré, Herbert F.

doi:10.1016/0038-1101(63)90115-1

Cited by 18 publications

(27 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1). A similar low energy peak has been observed for Ge-bicrystals by Matare [4]. It was interpreted in terms of the GB-induced deep defect traps, located within the energy gap.…”

Section: Resultssupporting

confidence: 79%

“…At T = 100 K they show typical back-to-back diode behavior caused by the presence of the GB potential well [4]. The near-zero resistance Β0 which, at a constant temperature, is the exponential function of the well depth was found to depend strongly on illumination.…”

Section: Resultsmentioning

confidence: 93%

“…The purpose of the present work is to examine the optical properties of the HgCdMnTe bicrystals by means of the photovoltaic effect (PVE). Detailed theoretical description of this effect in GB-s and the first measurements for Ge-bicrystals were made by Matare [4].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Optical Studies of HgCdMnTe Bicrystals

1991

View full text Add to dashboard Cite

show abstract

“…1). A similar low energy peak has been observed for Ge-bicrystals by Matare [4]. It was interpreted in terms of the GB-induced deep defect traps, located within the energy gap.…”

Section: Resultssupporting

confidence: 79%

Section: Resultsmentioning

confidence: 93%

See 1 more Smart Citation

Optical Studies of HgCdMnTe Bicrystals

1991

View full text Add to dashboard Cite

show abstract

“…17 The authors of Ref. 16 suggested that the presence of decreasing dependencies R c ðTÞ proves that the thermionic mechanism of current flow is realized in the contact. They determined the barrier height (which turned out to be anomalously low) from the slope of the R c ð1=TÞ curve.…”

Section: Gaas Casementioning

confidence: 99%

Mechanism of contact resistance formation in ohmic contacts with high dislocation density

Sachenko

Belyaev

Болтовец

et al. 2012

Journal of Applied Physics

View full text Add to dashboard Cite

Source/drain electrodes contact effect on the stability of bottom-contact pentacene field-effect transistors AIP Advances 2, 022113 (2012) All-metallic lateral spin valves using Co2Fe(Ge0.5Ga0.5) Heusler alloy with a large spin signal Appl. Phys. Lett. 100, 052405 (2012) Contact transport of focused ion beam-deposited Pt to Si nanowires: From measurement to understanding Appl. Phys. Lett. 100, 053503 (2012) Ab initio quantum transport simulation of silicide-silicon contacts J. Appl. Phys. 111, 014305 (2012) Impact of fluorine treatment on Fermi level depinning for metal/germanium Schottky junctions Appl. Phys. Lett. 99, 253504 (2011) Additional information on J. Appl. Phys. A new mechanism of contact resistance formation in ohmic contacts with high dislocation density is proposed. Its specific feature is the appearance of a characteristic region where the contact resistance increases with temperature. According to the mechanism revealed, the current flowing through the metal shunts associated with dislocations is determined by electron diffusion. It is shown that current flows through the semiconductor near-surface regions where electrons accumulate. A feature of the mechanism is the realization of ohmic contact irrespective of the relation between the contact and bulk resistances. The theory is proved for contacts formed to III-V semiconductor materials as well as silicon-based materials. A reasonable agreement between theory and experimental results is obtained.

show abstract

“…The difference in the effect of the MPF on the PL and EL spectral properties is probably due to the large influence on the EL quantum yield in powders of innumerable internal boundaries such as dislocation boundaries that intensify radiative recombination in EL. It is known [23] that the EL intensity of ZnS reaches a maximum at sites of dislocations or dislocation pileups. However, the LES for λ = 505 nm in ZnS:CuCl (Fig.…”

Section: Introductionmentioning

confidence: 99%

Effect of magnetic pulsed field on luminescence of zinc sulfide doped with CuCl, In, and MnS

et al. 2007

View full text Add to dashboard Cite

The effect of a magnetic pulsed field (MPF) of induction B = 1 T on photoluminescence, electroluminescence, and luminescence excitation spectra of powdered ZnS doped with CuCl, In, and MnS is investigated. It is shown that MPF treatment of these materials changes the photoluminescence spectra only in the case of luminophor ZnS:In whereas only the luminescence excitation spectra change for ZnS:CuCl and ZnS:Mn.Introduction. It is well known that an energetically weak magnetic field (MF) of induction B ≈ 1 T can effectively influence at room temperature physical processes in nonmagnetic materials and cause long-term residual changes in their properties. According to the literature [1,2], this can be explained by the influence of the MF on the kinetics and yield of spin-coupled reactions in the subsystem of paramagnetic structural defects that is manifested in dislocation mobility. The nature of these effects is related to the fact that the MF interferes with the evolution of paramagnetic particles during a short (1-10 ns) intermediate stage during which spin-lattice relaxation cannot occur. The duration of spin conversion is ~10 -10 sec for MF induction of B ≈ 1 T. Therefore, investigations of property changes of actual crystals influenced by external MF can provide information on the occurrence of physical processes in the subsystem of structural defects with nanosecond resolution [1][2][3][4]. Furthermore, the ability to direct the influence on the subsystem of structural defects and other paramagnetic components of the material has important applied signficance. Defects are exceedingly common luminescence quenchers in A II B VI materials used as luminophors. Therefore, any method that allows luminescence centers to be activated in the material by removing quenching centers from the recombination region should be studied in detail.Research on the influence of MF on the luminescence properties of single crystals of ZnS [5] and AgCl [6] made it possible to evaluate the concentration change of defects in these materials with a change of the absolute intensities of their luminescence bands. The goal of the present work is to explain the influence of a weak magnetic pulsed field (MPF) on the efficiency of transitions corresponding to excitation and recombination of charge carriers and on intracenter luminescence based on the luminescence research methods. Powdered luminophors based on ZnS doped with impurities that are the ones most often used as coactivators (Cl,In [7,8]) and activators ) of ZnS luminescence were selected for the research. Moreover, an impurity of Mn in ZnS has another interesting feature. It has intracenter transitions in its unfilled 3d-shell.Experimental. Powdered ZnS (ETO.035.295 TU) was doped with ~15 µm (80% composition) particles by annealing together at 800 o C for 1 h (using an activated carbon gas trap) with one of CuCl, MnS, or In. We investigated pairs of identical samples of doped ZnS, one of which was treated with a MPF; the other, (which was not treated with a MPF) used as a control. Po...

show abstract

Halbleiterbauelemente, vol. 1, semiconductors and semiconductor diodes

Cited by 18 publications

References 0 publications

Optical Studies of HgCdMnTe Bicrystals

Optical Studies of HgCdMnTe Bicrystals

Mechanism of contact resistance formation in ohmic contacts with high dislocation density

Effect of magnetic pulsed field on luminescence of zinc sulfide doped with CuCl, In, and MnS

Contact Info

Product

Resources

About