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In this paper, SiC MOS capacitors were fabricated and annealed in Ar/O2 = 9:1 ambient with different temperature, and the annealing effects on the reliability and performance of SiC MOS capacitance were investigated. We found that annealing in Ar/O2 ambient is capable to improve the reliability of gate oxide. When annealing in higher temperature, defects near SiO2/SiC interface are reduced, but the gate reliability deteriorated. It is difficult to obtain the best performance and reliability under the same conditions. There is a trade-off between Dit and reliability to adjust the annealing conditions.