In this paper, SiC MOS capacitors were fabricated and annealed in Ar/O2 = 9:1 ambient with different temperature, and the annealing effects on the reliability and performance of SiC MOS capacitance were investigated. We found that annealing in Ar/O2 ambient is capable to improve the reliability of gate oxide. When annealing in higher temperature, defects near SiO2/SiC interface are reduced, but the gate reliability deteriorated. It is difficult to obtain the best performance and reliability under the same conditions. There is a trade-off between Dit and reliability to adjust the annealing conditions.

An experimental investigation was conducted on aluminum alloy mortise-and-tenon T-joints (MT-joints) under dynamic cyclic loading. The MT-joints strengths, stiffness, failure characteristics, hysteresis curves, skeleton curves, restoring force models and energy dissipation curves of the joints have been reported. It’s shown from the experiment that main failure modes of the MT-joints are plastic deformation of squeezing area and tenon divorced from joint. And MT-joints structure is a typical semi-rigid connection that can withstand both rotation and bending moment.