This paper highlights the development of a human voice command system that is able to activate the electrical appliances at home in wireless environment. The idea is to establish a wireless connection between a client computer and a server in a real application. It is developed especially to assist disabled person to do their house chores. Via the wireless communication system, this system utilizes the remote voice recognition system server to translate the voice input received from a serviced client computer into a symbolic data file to be processed by the client's computer. The wireless technology implemented in this project is the Wi-Fi network and the computer server utilizes the GUI manager for implementing the speech recognition system. The GUI system is developed using the Microsoft Visual Basic.net software and the speech recognition software used is the Microsoft Speech (SAPI). In conclusion, from the result analyses, the performance of the system depends on the wireless coverage and distance, voice input type and the environment condition.
We report in this paper, an optimized design and characterization of SOI based single mode, four channels wavelength demultiplexer using microrings. The usage of siliconon-insulator (SOI) allows a wide free spectral range (FSR) for the device that is crucial in developing ultra-compact integrations of planar lightwave circuits (PLCs). The characterizations are done using Finite-Difference Time-Domain (FDTD) mode simulations from RSOFT. Serially cascaded microring arrays up to the third order are presented to study the design trade-off among the FSR, Q-factor and optical losses of the laterally coupled wavelength demultiplexer. The demultiplexer is expected to be working at C-band region of Wavelength Division Multilplexing (WDM) for a wavelength around 1550 nm. Our proposed demultiplexer has low insertion loss (< 0.5 dB) and a crosstalk around 12 ∼ 19 dB.
<p>This paper presents an investigation on properties of Double Gate FinFET (DGFinFET) and impact of physical properties of FinFET towards short channel effects (SCEs) for 30 nm device, where depletion-layer widths of the source-drain corresponds to the channel length aside from constant fin height (HFIN) and the fin thickness (TFIN). Virtual fabrication process of 3-dimensional (3D) design is applied throughout the study and its electrical characterization is employed and substantial is shown towards the FinFET design whereby in terms of the ratio of drive current against the leakage current (ION/IOFF ratio) at 563138.35 compared to prediction made by the International Technology Roadmap Semiconductor (ITRS) 2013. Conclusively, the incremental in ratio has fulfilled the desired in incremental on the drive current as well as reductions of the leakage current. Threshold voltage (VTH) meanwhile has also achieved the nominal requirement predicted by the International Technology Roadmap Semiconductor (ITRS) 2013 for which is at 0.676±12.7% V. The ION , IOFF and VTH obtained from the device has proved to meet the minimum requirement by ITRS 2013 for low performance Multi-Gate technology.</p>
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