Colloidal quantum dots (CQDs) provide wide spectral tunability and high absorption coefficients owing to quantum confinement and large oscillator strengths, which along with solution processability, allow a facile, low-cost, and roomtemperature deposition technique for the fabrication of photonic devices. However, many solution-processed CQD photodetector devices demonstrate low specific-detectivity and slow temporal response. To achieve improved photodetector characteristics, limiting carrier recombination and enhancing photogenerated carrier separation are crucial. In this study, we develop and present an alternate vertical-stack photodetector wherein we use a solution-processed quantum dot photoconversion layer coupled to an amorphous selenium (a-Se) wide-bandgap charge transport layer that is capable of exhibiting single-carrier hole impact ionization and is compatible with active-matrix readout circuitry. This a-Se chalcogenide transport layer enables the fabrication of highperformance and reliable solution-processed quantum dot photodetectors, with enhanced charge extraction capabilities, high specific detectivity (D* ∼ 0.5−5 × 10 12 Jones), fast 3 dB electrical bandwidth (3 dB BW ∼ 22 MHz), low dark current density (J D ∼ 5−10 pA/cm 2 ), low noise current (i n ∼ 20−25 fW/Hz 1/2 ), and high linear dynamic range (LDR ∼ 130−150 dB) across the measured visible electromagnetic spectrum (∼405−656 nm).

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Tri‐cation (Cs+/CH3NH3+/CH(NH2)2+) and dual‐anion (Br–/I–) perovskites are promising light absorbers for inexpensive infrared (IR) photodetectors but degrade under prolonged IR exposure. Here, stable IR photodetectors based on electrospun tri‐cation perovskite fibers infiltrated with hole‐transporting π‐conjugated small molecule 2,2′,7,7′‐tetrakis[N,N‐di(4‐methoxyphenyl)amino]‐9,9‐spirobifluorene (Spiro‐OMeTAD) are demonstrated. These hybrid perovskite photodetectors operate at a low bias of 5 V and exhibit ultra‐high gains with external quantum efficiencies (EQEs) as high as 3009%, decreasing slightly to ≈2770% after 3 months in air. These EQE values are almost ten times larger than those measured for photodetectors comprising bilayer perovskite/Spiro‐OMeTAD films. A high density of charge traps on electrospun fiber surfaces gives rise to a photomultiplication effect in which photogenerated holes can travel through the active layer multiple times before recombining with trapped electrons. Time‐resolved photoluminescence and conductive atomic force microscopy mapping reveal the improved performance of electrospun fibers to originate from the significantly enhanced interfacial surface area between the perovskite and Spiro‐OMeTAD compared to bilayers. As a solution‐based, scalable and continuous method of depositing perovskite layers, electrospinning thus presents a promising strategy for the inexpensive fabrication of high‐performance IR photodetectors for applications ranging from information technology to imaging.

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