n-Type doping of a solution processed p-type semiconductor using isoelectronic surface dopants for homojunction fabrication

Mølnås, Håvard; Russ, Boris; Farrell, Steven L.; Gordon, Madeleine P.; Urban, Jeffrey J.; Sahu, Ayaskanta

doi:10.1016/j.apsusc.2022.153089

Cited by 6 publications

(5 citation statements)

References 26 publications

(12 reference statements)

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“…Figure 13d shows the temperature-dependent zT of Ge 0.86 Pb 0.1 Bi 0.04 Te within a temperature range corresponding to the rhombohedral phase and some typical PbSe-, PbTe-, and SnTe-based materials that crystalize in a cubic structure. [143,237] zT of R-Ge 0.86 Pb 0.1 Bi 0.04 Te reaches a peak value of ≈2.4 at 600 K, higher than those of the other cubic materials over the entire measured temperature range. The average zT is also significantly enhanced and reaches 1.3 over the rhombohedral phase temperature range of 300-600 K and 1.5 over the entire temperature range of 300-800 K. [143] Using the concept of the intermediate state, high thermoelectric performance has also been achieved in Ge 1−x−y Pb x Sb y Te.…”

Section: Slight Symmetry Reductionmentioning

confidence: 78%

Advances in Versatile GeTe Thermoelectrics from Materials to Devices

Hong

Wang

et al. 2022

Advanced Materials

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The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adma.202208272. = − + ZT S S T (3) in the above equations, T cold and T hot are cold-and hot-end temperatures. ΔT = T hot − T cold , T = (T hot + T cold )/2. S i is the Seebeck coefficient, σ i is the electrical conductivity, and κ i is the thermal conductivity with the subscript i representing n-or p-type materials. Since such a Z T is defined by assuming the temperature-independent S i , σ i , and κ i under the temperature Driven by the intensive efforts in the development of high-performance GeTe thermoelectrics for mass-market application in power generation and refrigeration, GeTe-based materials display a high figure of merit of >2.0 and an energy conversion efficiency beyond 10%. However, a comprehensive review on GeTe, from fundamentals to devices, is still needed. In this regard, the latest progress on the state-of-the-art GeTe is timely reviewed. The phase transition, intrinsic high carrier concentration, and multiple band edges of GeTe are fundamentally analyzed from the perspectives of the native atomic orbital, chemical bonding, and lattice defects. Then, the fabrication methods are summarized with a focus on large-scale production. Afterward, the strategies for enhancing electronic transports of GeTe by energy filtering effect, resonance doping, band convergence, and Rashba band splitting, and the methods for strengthening phonon scatterings via nanoprecipitates, planar vacancies, and superlattices, are comprehensively reviewed. Besides, the device assembly and performance are highlighted. In the end, future research directions are concluded and proposed, which enlighten the development of broader thermoelectric materials.

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Section: Slight Symmetry Reductionmentioning

confidence: 78%

Advances in Versatile GeTe Thermoelectrics from Materials to Devices

Hong

Wang

et al. 2022

Advanced Materials

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Section: Resultsmentioning

confidence: 98%

“…However, as indicated in recent literature, compared to the binary compound, the ternary Cu based compounds are much less influenced by immigration. 67 In sum, the compositing with CuAlS 2 also improves the thermal stability and mechanical performance of Cu 3 SbSe 4 , which makes it suitable for working at relatively high temperatures and easy for device fabrication. Moreover, in addition to the thermoelectric performance and thermal stability, Snyder et al [68][69][70] proposed another essential physical parameter termed as compatibility that affects the conversion efficiency for TE power generation devices from the aspect of practical engineering.…”

Section: Energy and Environmental Science Papermentioning

confidence: 98%

High thermoelectric performance and compatibility in Cu₃SbSe₄–CuAlS₂ composites

Huang

Shen

Wang

et al. 2023

Energy Environ. Sci.

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“…Figure 3 a shows the dependence of their Seebeck coefficients ( S ) on temperature. It can be seen that commercial Bi 2 Te 3 exhibits the p-type TE characteristic between 303~453 K, but the Seebeck coefficient turns negative at the temperature range of 453~573 K, which is mainly as a result of the sensitivity to particle size, surface defects and manufacturing processes [ 35 , 36 ]. In the cases of the synthesized Bi 2 Te 3 -copper selenide alloys, all of them maintain the n-type characteristic in the entire testing temperature range, and Bi 2 Te 3 -Cu 3 Se 2 and Bi 2 Te 3 -Cu 2−x Se alloys have relatively lower absolute S values around 15~80 μV·K −1 .…”

Section: Resultsmentioning

confidence: 99%

Fine-Tuning Bi2Te3-Copper Selenide Alloys Enables an Efficient n-Type Thermoelectric Conversion

Jia

Shi

et al. 2022

Molecules

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Bismuth tellurides is one of the most promising thermoelectric (TE) material candidates in low-temperature application circumstances, but the n-type thermoelectric property is relatively low compared to the p-type counterpart and still needs to be improved. Herein, we incorporated different copper selenides (CuSe, Cu3Se2 and Cu2−xSe) into a Bi2Te3 matrix to create the alloy by grinding and successive sintering to enable higher thermoelectric performance. The results demonstrated that all alloys achieved n-type TE characteristics and Bi2Te3-CuSe exhibited the best Seebeck coefficient and power factor among them. Along with the low thermal conductivity, the maximum dimensionless TE figure of merit (ZT) value of 1.64 at 573 K was delivered for Bi2Te3-CuSe alloy, which is among the best reported results in the n-type Bi2Te3-based TE materials to the best of our knowledge. The improved TE properties should be related to the co-doping process of Se and Cu. Our investigation shows a new method to enhance the performance of n-type TE materials by appropriate co-doping or alloying.

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n-Type doping of a solution processed p-type semiconductor using isoelectronic surface dopants for homojunction fabrication

Cited by 6 publications

References 26 publications

Advances in Versatile GeTe Thermoelectrics from Materials to Devices

Advances in Versatile GeTe Thermoelectrics from Materials to Devices

High thermoelectric performance and compatibility in Cu₃SbSe₄–CuAlS₂ composites

Fine-Tuning Bi2Te3-Copper Selenide Alloys Enables an Efficient n-Type Thermoelectric Conversion

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n-Type doping of a solution processed p-type semiconductor using isoelectronic surface dopants for homojunction fabrication

Cited by 6 publications

References 26 publications

Advances in Versatile GeTe Thermoelectrics from Materials to Devices

Advances in Versatile GeTe Thermoelectrics from Materials to Devices

High thermoelectric performance and compatibility in Cu3SbSe4–CuAlS2 composites

Fine-Tuning Bi2Te3-Copper Selenide Alloys Enables an Efficient n-Type Thermoelectric Conversion

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High thermoelectric performance and compatibility in Cu₃SbSe₄–CuAlS₂ composites