We employ an ab initio calculation based on density functional theory to investigate the ideal strength of face-centered cubic crystal Au under uniaxial stress along the [100] direction. We show that the stability of the perfect Au crystal under tensile stress is determined by the tetragonal shear stiffness modulus, with an ideal tensile strength of 4.2 GPa and the corresponding Lagrangian tensile strain of ∼ 0.07. The potential bifurcation from the primary uniaxial loading path is along the tetragonal shear. Under compressive stress, there is a stress-free body-centered cubic phase, which is unstable and ready to transform to a stress-free body-centered tetragonal phase with lower internal energy. The stable region is from - 1.6 to 4.2 GPa in the ideal strength, or from - 0.07 to 0.07 in the Lagrangian strain.
A series of nanostructured GaN Films have been prepared on Si substrates. Field emission measurements show that the oriented nanostructured GaN film with a thickness of 40 nm has an ultralow threshold field of 1.2 V / m at 1 mA/ cm 2 and yields a stable emission current of 40 mA/ cm 2 at 2.8 V / m, which is comparable to those of carbon nanotubes. A polarization field emission enhancement mechanism with ballistic electron transport is proposed to explain the origin of this ultralow-threshold field emission phenomenon.
We report on the shape and polarization control of site-controlled multiple and single InAs quantum dots (QDs) on InP pyramids grown by selective-area metal-organic vapor phase epitaxy. With increasing growth temperature the QDs elongate causing strong linear polarization of the photoluminescence. With reduced pyramid base/pyramid top area/QD number, the degree of polarization decreases, attributed to the symmetric pyramid top, reaching zero for single QDs grown at lower temperature. This control of linear polarization is important for entangled photon sources operating in the 1.55 μm wavelength region.
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