Simulation of double buffer layer on CIGS solar cell with SCAPS software

Qu, Jingjing; Zhang, Linrui; Wang, Hao; Song, Xuemei; Zhang, Yongzhe; Yan, Hui

doi:10.1007/s11082-019-2100-9

“…On the contrary, J sc linearly decreases with the bandgap of CIGS ( Figure 3 b). The short-circuit current ( I sc ) is calculated according to the following equations [ 36 ]:

…”

Section: Resultsmentioning

confidence: 99%

BTO-Coupled CIGS Solar Cells with High Performances

Li

¹

,

Luo

²

,

Gu

³

et al. 2022

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In order to improve the power conversion efficiency (PCE) of Cu(In,Ga)Se2 (CIGS) solar cells, a BaTiO3 (BTO) layer was inserted into the Cu(In,Ga)Se2. The performances of the BTO-coupled CIGS solar cells with structures of Mo/CIGS/CdS/i-ZnO/AZO, Mo/BTO/CIGS/CdS/i-ZnO/AZO, Mo/CIGS/BTO/CdS/i-ZnO/AZO, Mo/CIGS/CdS/BTO/i-ZnO/AZO, Mo/CIGS/BTO/i-ZnO/AZO, Mo/CIGS/CdS/BTO/AZO, and Mo/ CIGS/CdS(5 nm)/BTO(5 nm)/i-ZnO/AZO were systematically studied via the SCAPS-1D software. It was found that the power conversion efficiency (PCE) of a BTO-coupled CIGS solar cell with a device configuration of Mo/CIGS/CdS/BTO/AZO was 24.53%, and its open-circuit voltage was 931.70 mV. The working mechanism for the BTO-coupled CIGS solar cells with different device structures was proposed. Our results provide a novel strategy for improving the PCE of solar cells by combining a ferroelectric material into the p-n junction materials.

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“…Apart from that, the thickness of the buffer layer is varied from 20 nm to 100 nm to observe the behavior and optimized to 50 nm for maximum efficiency. The Input parameters for device simulation were adopted from the experimental results, literature as well as self-ascribed [43][44][45][46][47][48][49][50][51][52][53][54][55][56][57][58] . 18 3.1×10 18 3.1×10 18 VB Density of States (cm -3 ) 1.1×10 19 1.5×10 19 1.8×10 19 1.8×10 19 1.8×10…”

Section: Materials Parametersmentioning

confidence: 99%

Numerical Investigation of Cu<sub>2</sub>O as Hole Transport Layer for High-Efficiency CIGS Solar Cell

Yousuf¹,

Saeed²,

Tauqeer³

2022

Preprint

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Copper indium gallium selenide (CIGS) is an inexpensive material that has the potential to dominate the next-generation photovoltaic (PV) industry. Here we detail computational investigation of CIGS solar cell with encouragement of adopting cuprous dioxide (Cu2O) as a Hole Transport Layer (HTL) for efficient fabricated CIGS solar cells. Although Cu2O as a HTL has been studied earlier for perovskite and other organic/inorganic solar cell yet no study has been detailed on potential application of Cu2O for CIGS solar cells. With the proposed architecture, recombination losses are fairly reduced at the back contact and contribute to enhanced photo-current generation. With the introduction of Cu2O, the overall cell efficiency is increased to 26.63%. The wide-band of Cu2O pulls holes from the CIGS absorber which allows smoother extraction of holes with experiencing lesser resistance. Further, it was also inferred that, HTL also improves the quantum efficiency (QE) for photons with large wavelengths thus increases the cell operating spectrum.

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“…Cu2O [44] CIGS [45] ZnSe [45] i-ZnO [45] n+ZnO [45] Thickness Here with the lower thickness of the CdS layer, QE is higher as compared to higher thickness at the same wavelength. Fig.…”

Section: Parametersmentioning

confidence: 99%

Numerical Investigation of Cu<sub>2</sub>O as Hole Transport Layer for High-Efficiency CIGS Solar Cell

Yousuf¹,

Saeed²,

Tauqeer³

2021

Preprint

View full text Add to dashboard Cite

Copper indium gallium selenide (CIGS) is an inexpensive material that has the potential to dominate the next-generation photovoltaic (PV) industry. Here we detail computational investigation of CIGS solar cell with encouragement of adopting cuprous dioxide (Cu2O) as a Hole Transport Layer (HTL) for efficient fabricated CIGS solar cells. Although Cu2O as a HTL has been studied earlier for perovskite and other organic/inorganic solar cell yet no study has been detailed on potential application of Cu2O for CIGS solar cells. With the proposed architecture, recombination losses are fairly reduced at the back contact and contribute to enhanced photo-current generation. With the introduction of Cu2O, the overall cell efficiency is increased to 26.63%. The wide-band of Cu2O pulls holes from the CIGS absorber which allows smoother extraction of holes with experiencing lesser resistance. Further, it was also inferred that, HTL also improves the quantum efficiency (QE) for photons with large wavelengths thus increases the cell operating spectrum.

show abstract

Simulation of double buffer layer on CIGS solar cell with SCAPS software

Cited by 34 publications

References 13 publications

BTO-Coupled CIGS Solar Cells with High Performances

BTO-Coupled CIGS Solar Cells with High Performances

Numerical Investigation of Cu<sub>2</sub>O as Hole Transport Layer for High-Efficiency CIGS Solar Cell

Numerical Investigation of Cu<sub>2</sub>O as Hole Transport Layer for High-Efficiency CIGS Solar Cell

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