The implementation of ultralow dielectric constant (k value ≈ 2) materials to reduce signal propagation delay in advanced electronic devices represents a critical challenge in next generations of microelectronics technologies. The introduction of well‐stacked and low polarity molecules that do not compromise film density may lead to improvements and desirable material engineering, as conventional porous SiOx derivatives exhibit detrimental degradation of thermo‐mechanical properties when their k values are further scaled down. This work presents a systematic engineering approach for controlling ultralow‐k amorphous boron nitride (aBN) deposition on 300 mm Si platforms. The results indicate that aBN grown from borazine precursor exhibits ultralow dielectric constant ≈2, high density, excellent mechanical strength, and extended thermodynamic stability. Unintentional boron ion doping during plasma dissociation that may induce artificial reductions of k value on n‐type substrates is alleviated by employing a remote microwave plasma process. Moreover, the adoption of low growth rate processes for ultralow‐k aBN deposition is found to be critical to provide for the superior mechanical strength and high density, and is attributed to the formation of hexagonal ring stacking frameworks. These results pave the way and offer engineering solutions for new ultralow‐k material introduction into future semiconductor manufacturing applications.
Optical beam induced resistance change (OBIRCH) is one popular technique for isolating electrical shorts in process development test structures for 130nm and 110nm device technologies. However, OBIRCH inspection on 90nm technology is not always successful: since the OBIRCH signals of samples are very weak, or even comparable to noise. To overcome this, two alternative and complementary methods for isolating the failure have been developed. The first method is to calculate the coarse position of the defect directly from electrical resistance measurements. The second method is to enhance the OBIRCH signal using FIB circuit modification within the test structure. These methods can help locate defect at this structure by using electrical analysis only or enhancing the OBIRCH signal. The first method is an easy and quick method for short failure isolation, while the second can exactly locate the position of failure if the first method does not reveal a surface defect.
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