Optical beam induced resistance change (OBIRCH) is one popular technique for isolating electrical shorts in process development test structures for 130nm and 110nm device technologies. However, OBIRCH inspection on 90nm technology is not always successful: since the OBIRCH signals of samples are very weak, or even comparable to noise. To overcome this, two alternative and complementary methods for isolating the failure have been developed. The first method is to calculate the coarse position of the defect directly from electrical resistance measurements. The second method is to enhance the OBIRCH signal using FIB circuit modification within the test structure. These methods can help locate defect at this structure by using electrical analysis only or enhancing the OBIRCH signal. The first method is an easy and quick method for short failure isolation, while the second can exactly locate the position of failure if the first method does not reveal a surface defect.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.