In this paper, we present the impact of downscaling of nano-channel dimensions of Indium Arsenide Fin Feld Effect Transistor (InAs- FinFET) on electrical characteristics of the transistor, in particular; (i) ION/IOFF ratio, (ii) Subthreshold Swing (SS), Threshold voltage (VT), and Drain-induced barrier lowering (DIBL). MuGFET simulation tool was utilized to simulate and compare the considered characteristics based on variable channel dimensions: length, width and oxide thickness. The results demonstrate that the best performance of InAs- FinFET was achieved with channel length = 25 nm, width= 5 nm, and oxide thickness between 1.5 to 2.5 nm according to the selected scaling factor (K = 0.125).
This paper describes an optical fiber sensor for the monitoring of ammonia gas. An open path optical technique is used to analyze the absorption lines of ammonia within the ultra violet region. Experimental results describing the operation of the sensor are presented and are compared with theory. A comparison between a commercial sensor has been carried out and cross sensitivity testing with regard to oxygen and carbon dioxide gas is reported.
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