Electrical Сharacterization of Ge-FinFET Transistor Based on Nanoscale Channel Dimensions

Mahmood, Ahmed; Jabbar, Waheb A.; Hashim, Yasir; Manap, Hadi

doi:10.21272/jnep.11(1).01011

Cited by 8 publications

(7 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The tremendous downscaling of transistor dimensions has enabled the placement of over 100 million transistors on a single chip, thereby resulting in reduced cost, increased functionality, and enhanced performance of integrated circuits (ICs) [1]- [3]. However, reducing the size of conventional planar transistors would be exceptionally challenging due to electrostatic leakages and other fabrication issues [4], [5]. The application of nano-science and its inherent technology has been extensively used in interdisciplinary research, particularly in the past two decades [6], [7].…”

Section: Introductionmentioning

confidence: 99%

Modeling and characterization of optimal nano-scale channel dimensions for fin field effect transistor based on constituent semiconductor materials

Jabbar

Mahmood

Sultan³

2022

TELKOMNIKA

Self Cite

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Modeling and characterization of optimal nano-scale channel dimensions for fin field effect transistor based on constituent semiconductor materials

Jabbar

Mahmood

Sultan³

2022

TELKOMNIKA

Self Cite

View full text Add to dashboard Cite

“…Si nanowire transistors (SiNWT) will be more usable in the future after making its large amount of investigation of its characteristics by researchers. The researchers predicted that the future of electronics devices will highly depends on advancement in research of nano dimensional transistors as a roadmap [2][3][4][5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

A new factor for fabrication technologies evaluation for silicon nanowire transistors

Hashim

Shakib

2020

TELKOMNIKA

Self Cite

View full text Add to dashboard Cite

This paper reviews the fabrication technologies of silicon nanowire transistors (SiNWTs) and rapidly development in this area, as this paper presents various types of SiNWT structures, development of SiNWT properties and different applications until nowadays. This research provides a good comparison among fabrication technologies of SiNWTs depending on a new factor DIF, this factor depends on the size of channel and power consumption in channel. As a result of this comparison, the best technology to use in the future to fabricate silicon nano transistors for future ICs is AFM nanolithography.

show abstract

“…The improvement of new technology is described by its prominence on miniaturization scale to ultra-micro dimensions. That is the main principle of Nano technology which invaded the field of applied science, manufacturing, industrial, military, medical, agricultural and other fields [1][2][3] The most remarkable example for that is in nanoelectronics and nanoscience, where the technological progress has come from reductions, downsizing transistors and adding more numbers of transistors per chip [4,5]. The scaling of the complementary metal-oxide-silicon (CMOS) does not track the constant-field scaling principle accurately because of non-scaling factors-the threshold voltage [6,7].…”

Section: Introductionmentioning

confidence: 99%

Channel Length-Based Comparative Analysis of Temperature and Electrical Characteristics for SiNWT and GeNWT

al.¹

2020

IJCDS

View full text Add to dashboard Cite

This paper investigates the temperature sensitivity and electrical characteristics of Silicon Nanowire Transistor (SiNWT) and Germanium Nanowire Transistor (GeNWT) depending on variable channel length (Lg). It also studies the possibility of using them as a temperature nanosensor. The MuGFET simulation tool was exploited to investigate the characteristics of the considered nanowire transistors. Current-voltage characteristics with different values of temperature with channel length [Lg = 25, 45, 65, 85 and 105 nanometer (nm)], were simulated. MOS diode mode connection suggested measuring the temperature sensitivity of SiNWT and GeNWT too. Three (3) electrical characteristics namely; (i) Subthreshold Swing (SS), (ii) Threshold voltage (V T ), and (iii) Drain-induced barrier lowering (DIBL) were evaluated and compared for both NWTs. The obtained results show that SiNWT achieved a better temperature sensitivity with channel length range between 25 nm to 105 nm at operation voltage (V DD ) range 1 V to 5 V nm. It is very clear that the temperature sensitivity increased remarkably by increasing channel length for both of SiNWT and GeNWT as well, but in SiNWT the sensitivity is more steady compared to GeNWT that showing less sensitivity. Moreover, SiNWT shows better result in terms of electrical performance metrics for various channel length at T = 300 K comparing with GeNWT.

show abstract

Electrical Сharacterization of Ge-FinFET Transistor Based on Nanoscale Channel Dimensions

Cited by 8 publications

References 0 publications

Modeling and characterization of optimal nano-scale channel dimensions for fin field effect transistor based on constituent semiconductor materials

Modeling and characterization of optimal nano-scale channel dimensions for fin field effect transistor based on constituent semiconductor materials

A new factor for fabrication technologies evaluation for silicon nanowire transistors

Channel Length-Based Comparative Analysis of Temperature and Electrical Characteristics for SiNWT and GeNWT

Contact Info

Product

Resources

About