The polarity is found to be a key parameter for the growth of high quality epitaxial GaN films on sapphire (00.1) substrates. A model is suggested which may consistently explain the observed influence of the process parameters on the polar orientation of the epitaxial film. A simple etching technique is proposed for quick distinction of the film polarity. The assignment of the etching behavior to the proper crystal structure is achieved by an analysis of the respective two-dimensional photoelectron diffraction patterns.

Trace gas sensing in the mid-infrared using quantum cascade lasers (QCLs) promises high specificity and sensitivity. We report on the performance of a simple cavity enhanced absorption spectroscopy (CEAS) sensor using a continuous wave external-cavity QCL at 7.4 μm. A noise-equivalent absorption coefficient αmin of 2.6 × 10–8 cm–1 in 625 s was achieved, which corresponds to a detection limit of 6 ± 1 ppb of CH4 in 15 millibars air for the R(3) transition at 1327.074 cm–1. This is the highest value of noise-equivalent absorption and among the longest effective path length (1780 m) reported to date with QCL-based CEAS.

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This paper compares H2/Ar, CH4/H2/Ar and CH4/H2/N2/Ar plasma etch processes for CdZnTe and CdTe substrates in view of their potential to provide high-quality substrate surfaces for subsequent HgCdTe epitaxy. An electron cyclotron resonance source was used as plasma generator, and ellipsometry, angle-resolved x-ray photoelectron spectroscopy and low energy electron diffraction were applied to characterize roughness, composition, and order of the resulting substrate surfaces. It was found that CdZnTe is much more susceptible to evolving surface roughness under H2/Ar plasma exposure than CdTe. The severe roughening observed at 100 deg C sample temperature was found to be correlated with a build-up of ZnTe at the surface, which suggests that the roughness formation may result from a preferential etching of the CdTe component. This surface degradation could be reduced by the addition of CH4, to the process gases. However, only a further addition of nitrogen gas balanced and substantially im proved the plasma process so that atomically clean, very smooth, and stoichiometrically composed CdZnTe surfaces of long-range order were eventually obtained