Surface cleaning and etching of CdZnTe and CdTe in H2/Ar, CH4/H2/Ar, and CH4/H2/N2/Ar electron cyclotron resonance plasmas

Abstract

This paper compares H2/Ar, CH4/H2/Ar and CH4/H2/N2/Ar plasma etch processes for CdZnTe and CdTe substrates in view of their potential to provide high-quality substrate surfaces for subsequent HgCdTe epitaxy. An electron cyclotron resonance source was used as plasma generator, and ellipsometry, angle-resolved x-ray photoelectron spectroscopy and low energy electron diffraction were applied to characterize roughness, composition, and order of the resulting substrate surfaces. It was found that CdZnTe is much more susceptible to evolving surface roughness under H2/Ar plasma exposure than CdTe. The severe roughening observed at 100 deg C sample temperature was found to be correlated with a build-up of ZnTe at the surface, which suggests that the roughness formation may result from a preferential etching of the CdTe component. This surface degradation could be reduced by the addition of CH4, to the process gases. However, only a further addition of nitrogen gas balanced and substantially im proved the plasma process so that atomically clean, very smooth, and stoichiometrically composed CdZnTe surfaces of long-range order were eventually obtained

Plasma Passivation Etching for HgCdTe

“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14] However, ICP plasma processing, used in HgCdTe, is still maturing and continued research is needed. 4,7,14 ICP plasma processing may also be used to replace conventional wet chemical clean-up, and even be used in the surface preparation for epitaxy of II-VI materials.…”

Morphology of Inductively Coupled Plasma Processed HgCdTe Surfaces

“…[1][2][3][4] Several studies have also reported the effect that high-density ''dry'' electron cyclotron resonance (ECR) plasmas have on HgCdTe epitaxial properties. [5][6][7][8][9][10][11][12][13][14] However, ICP plasma processing, for use in HgCdTe, is still maturing and continued research is needed. 4,7,14,15 ICP plasma processing may also be used to replace conventional wet chemical clean-up, and can even be used in the surface preparation for epitaxy of II-VI materials.…”

Effect of treatment on the CdTe, Cd1–xMnxTe and Cd1–xZnxTe surface stoichiometry

“…With the use of etchants, material is often etched irregularly, and the surface becomes contaminated with reaction products and etchant components. All kinds of final washing solve this problem only partially [1][2][3]. Therefore, the search for optimal methods of surface treatment is continued.…”