Interface potential barrier heights for ultrathin silicon oxides (15– 44 Å) on silicon and effective electron masses in some of these oxides are evaluated. Evaluation is performed using a new technique of analyzing the charging characteristics of metal-nitride-oxide-semiconductor capacitors. Oxides thicker than 36 Å have the same potential barrier heights as those for thick oxides, assuming the effective electron mass of the oxides is the same. However, for oxides thinner than 31 Å, the potential barrier heights decrease and the effective electron masses increase as the oxide thickness decreases. These results suggest that oxides at least thicker than 36 Å can be applied to metal-oxide-semiconductor field-effect transistors as gate oxides.
A new model of an electron free path in multiple layers is proposed for Monte Carlo simulation of electron trajectories. In this model, the free path is calculated taking into account not only the scattering probability in the layer involving the initial scattering point but also that in the layers along the scattering direction. The result, simulated with the new model, agrees with the experimental result much better than results obtained with conventional models for backscattered electron intensity. It is also suggested that the simulation accuracy for the electron beam lithography is improved using the new model.
Energy-filtered reflection high energy electron diffraction and reflection electron energy loss spectroscopy expand the usefulness of reflection high energy electron diffraction for quantitative structure determination and surface spectroscopy during film growth. Several implementations of energy-filtered reflection high energy electron diffraction are discussed, along with the progress and prospects for structure determination. New developments in parallel detection reflection electron energy loss spectroscopy (PREELS) enable the use of this method to obtain surface-spectroscopic information in real time during thin film growth, greatly expanding the range of surface information available during growth.
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