Crosshatch observation in MBE-grown Be-doped InGaAs epilayer on InP

Measurement of third-order nonlinear susceptibility tensor in InP using extended Z-scan technique with elliptical polarization

“…( 12). The measured transmittances were fitted very well not only in region A 1 and the base line as well as for linearly polarized light in the previous work, 7) but also in region A 2 , that is, the TPA occurs by the once reflected beam at the exit surface. These results confirm the validity of our approaches of TPA analysis by Eq.…”

“…We have investigated the TPA in indium-related compounds. [7][8][9] The β in InP, which has been widely used for optical devices, has been investigated for some wavelengths. [10][11][12][13] However, Im[ χ (3) ] has not been evaluated.…”

Measurement of polarization dependence of two-photon absorption coefficient in InP using extended Z-scan technique for thick materials

“…T wo-photon absorption in indium-related compounds has been investigated for application to ultrafast optical devices. 1,2) The polarization dependence of the two-photon absorption coefficient β can be expressed with the imaginary part of the third-order nonlinear susceptibility tensor χ (3) . 3) In our previous work, three independent tensor elements of Im[ χ (3) ] in InP have been estimated experimentally from the polarization dependence of β with a linearly polarized two-beam configuration.…”

“…It is regarded that the effective distance decreases inversely proportionally to the refractive index. Equation (2) shows that the beam waist moves with z s . Suppose a sample has the thickness L.…”

Growth optimization of InAs/GaAs quantum dots and performance enhancement of a GaAs tunnel diode by embedding quantum dots for solar cell application

“…It is known that addition of indium can suppress beryllium dopant diffusion [40], however, it seems to occur less in a sufficiently thin layer; this is because the diffusion length of the dopant atoms extends beyond several ML despite the presence of indium-containing material. Beryllium atoms that diffuse into InAs relax the strain by clustering with each other rather than forming InAs QDs [41,42], thereby decreasing the kinetic energy of the surface adatoms. Thus it is highly required to prevent the excessive beryllium diffusion.…”