A 240 W power FET for cellular base stations of a next generation system has been developed. The FET consists of four 60 W chips, which were fabricated by using our high efficiency and low distortion device technique, combined in a push-pull configuration. The developed FET achieved 240 W (53.8 dBm) output power, 11.2 dB linear gain and 54 YO power-added efficiency at 2.14 GHz. This is the highest output power device using GaAs FET technology. 0-7803-5687-X/00/510.00 0 2000 IEEE 2000 IEEE M?T-S Digest
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