An ultra broad band 300 W GaAs power FET for W-CDMA base stations

Ebihara, Koji; Inoue, Koji; Haematsu, H.; Yamaki, F.; Takahashi, Hidenori; Fukaya, J.

doi:10.1109/mwsym.2001.966978

Cited by 8 publications

(2 citation statements)

References 4 publications

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“…Although LDMOS FETs are the most widely used technology today in this application below 2 GHz, their relatively low unity gain cut-off frequency (usually below 7 GHz), means that they struggle to simultaneously meet the efficiency and linearity requirements for third-generation mobile communication systems operating above 2 GHz. Over the past three years very high power GaAs MESFETs, HFETs and PHEMTs have demonstrated superior performance to LDMOS at these frequencies [4,5,6]. Until recently the cost of compound semiconductor transistors has been significantly higher than that of LDMOS.…”

Section: Power Transistor Performancementioning

confidence: 99%

Recent developments in compound semiconductor microwave power transistor technology

Snowden

2004

IEE Proc., Circuits Devices Syst.

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Abstract. This paper addresses the state-of-the-art in microwave and millimetre-wave power transistor technology. The relative performance of microwave power transistor technology from 1 GHz to 60 GHz is reviewed. The fundamental technological drivers in the design of microwave compound semiconductor power transistors are discussed as the basis for developing optimum designs. A new high yield power GaAs pHEMT process is described and the application of this technology to multi-carrier microwave power amplifiers is discussed, achieving state-of-the-art performance, with output powers of up to 120 W with 70% efficiency at 2.1 GHz.

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Section: Power Transistor Performancementioning

confidence: 99%

Recent developments in compound semiconductor microwave power transistor technology

Snowden

2004

IEE Proc., Circuits Devices Syst.

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“…To date, a 150-W MOSFET of the Si-LDMOS (Linearly Diffused MOS) type has been developed [1], and a 300-W GaAs MESFET has been developed for W-CDMA [2]. However, the power density of these Si and GaAs high-frequency power transistors is approaching its limit due to material properties related to breakdown voltage and heat dissipation.…”

Section: Introductionmentioning

confidence: 99%