A high gain L-band GaAs FET technology for 28V operation

Inoue, Koji; Nagahara, Miyuki; Ui, Norihiko; Haematsu, H.; Sano, S.; Fukaya, J.

doi:10.1109/mwsym.2004.1339091

Cited by 6 publications

(2 citation statements)

References 5 publications

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“…While connecting devices DC in series helps in biasing at higher voltages, the RF impedance of the RF parallel combination becomes very low, leading to difficulties in matching for broadband applications. Recently, there have been reports [3][4][5][6] of high DC bias voltage operation from FET, PHEMT, SiC and GaN devices. But theses devices are either very expensive or still in the R&D stage with immature technology.…”

Section: Introductionmentioning

confidence: 99%

Ultra-Broadband GaAs HIFET MMIC PA

Ezzeddine

Huang

2006

2006 IEEE MTT-S International Microwave Symposium Digest

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This paper reports the first MMIC using the HIFET (High-Voltage, High-Impedance FET) concept with very broadband power performance and small die size. This GaAs MMIC power amplifier has a gain of 21dB ± ldB and over 2W of P1dB over the entire 30 MHz to 2.5 GHz frequency band with 20% efficiency, at a bias voltage of +20V. We believe that this is the first MMIC ever reported which achieves this combination of instantaneous bandwidth, output power, and efficiency, within a die size of 4 mm2.

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Section: Introductionmentioning

confidence: 99%

Ultra-Broadband GaAs HIFET MMIC PA

Ezzeddine

Huang

2006

2006 IEEE MTT-S International Microwave Symposium Digest

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“…Considering the superior properties of GaAs to those of Si, such as higher electron mobility and higher breakdown strength, there is a growing interest in developing high-power GaAs-based FETs for future-generation power amplifiers [2][3][4][5][6]. To date, 26-35V operation of GaAs FETs have been achieved by using either a field plate [2][3][4] or an overlapping gate [5,6], however, the breakdown voltages of these devices are still about 20V below that of the Si LDMOS. Therefore, new approaches other than field plate or overlapping gate are needed to further improve GaAs FET power performance.…”

Section: Introductionmentioning

confidence: 99%

28V planar GaAs MESFETs for wireless base-station power amplifiers

Yang¹,

Haldar

Ye³

et al. 2005

IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05.

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This paper reports DC and RF characteristics of a high-voltage planar GaAs MESFET. Its breakdown voltages are over 65V at off state (V gs = -1.5V) and 30V at on state (V gs = 0.5V). Under 28V drain bias and 1.9GHz input, the power density reaches 1.0 W/mm with greater than 14dB linear gain. The third-order intermodulation product is −34dBc with 1dB back off from 1dB gain compression. These results suggest that the planar GaAs MESFET may be used as high-power and high-linearity RF power amplifiers in wireless base stations. The planar structure also makes it highly suitable for low-cost mass production.

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