The high power performance of an ultrafast GaInAs p-i-n photodiode photodetector with integrated optical waveguide and biasing network is demonstrated. Up to about +20 dBm optical peak power the FWHM of 9 ps remains nearly constant proving the applicability in EDFA-based 40 Gbit/s receivers
The self-aligned flip-chip (FC) bonding technique is a very attractive means for the assembly of photonic devices containing multiple optical as well as electrical waveguide interconnects. In this article we propose a fluxless FC-bonding technology which nevertheless ensures efficient solder oxide reduction by applying molecular hydrogen (H2) under vacuum conditions. Bonding experiments were carried out in a newly developed FC-bonder of which some interesting details are reported. Reproducable bonding accuracies below the required tolerances for fiber to tapered waveguide coupling of
This paper addresses the power reduction concepts of an electro-optical transmitter applicable for future small form factor modules such as CFP4. To satisfy the power restrictions of these standards, equations and detailed explanations of the relevant shares of overall power consumption are given. To improve the overall efficiency, an open-collector driver realized in a SiGe technology with f T = 190 GHz and f max = 200 GHz is proposed for driving an InPbased IQ MZ-modulator. This approach saves 30 % of the driver power and achieves an EVM rms of 8.7 % for a QPSK signal at 32 GBd. A detailed performance comparison to a structurally identical back terminated driver is presented. Further power reduction is demonstrated with a bias tee configuration for a single modulator. DPSK measurements show a very low power consumption of 290 mW at an EVM rms of 7.5 %. The presented bias tee solution simplifies the assembly without performance compromises. All drivers presented in this paper have differential input/output signals and were designed for a non 50 Ohm output impedance to optimize power consumption and performance.
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