High-power performance of a high-speed photodetector

Abstract

The high power performance of an ultrafast GaInAs p-i-n photodiode photodetector with integrated optical waveguide and biasing network is demonstrated. Up to about +20 dBm optical peak power the FWHM of 9 ps remains nearly constant proving the applicability in EDFA-based 40 Gbit/s receivers

Ultrafast photodetectors and receiver

“…Owing to the good potential for monolithic integration, the ability to form twin-type and balanced type detectors and the good linearity from low signal levels to high power values, the side-illuminated waveguide-integrated photodetector types are promising [15][16][17]. This basic detector type was optimized, now to achieve a 3-dB bandwidth in excess of 100 GHz.…”

“…24. It contains two spot-size transformers, two waveguide S-bends and a pair of high-speed pin-photodiodes (PD1 and PD2) with high power capability [16]. Grown by MOVPE, the evanescently coupled photodiodes with an active area of 5 × 25 μm 2 are located on top of the semi-insulating waveguide layer stack and are biased by means of integrated bias-circuits.…”

“…The InP-based photonic integrated twin-photodetector comprises a vertically tapered spot size converter, a multimode interference (MMI) coupler for optical 3 dB power splitting and two waveguide-fed evanescently coupled high-speed p-i-n photodiodes [24,16], one with inverse polarity. The design of the differential detector is described in [25] and is schematically depicted in Fig.…”

Using selective Zn diffusion to enhance the performance of the photodiode in InP/InGaAs PD/HBT integration

“…However, these photo-carriers will be accumulated at the edge of the depletion region to screen the given reverse bias and saturate the PD's output power [6]. In this article, the additional Zn diffusion process is proposed and applied in InP/InGaAs p-i-n PD/HBT integrated structure to enhance the PD's performance.…”

“…One of the key building blocks in wireless communication systems is the low-noise amplifier (LNA) which determines the sensitivity of the receiver. Various techniques have been proposed for LNA design to achieve low noise figure (NF) and high gain [1][2][3][4][5][6], while a main challenge is to maintain good performance under a low operation voltage and a low power consumption. Many CMOS LNAs operated at K-band (18 -26 GHz) have been reported [7][8][9][10].…”