Monolithic 90°Hybrid with Balanced PIN Photodiodes for 100 Gbit/s PM-QPSK Receiver Applications

Bach, H.-G.; Matiss, A.; Leonhardt, Christoph C.; Kunkel, R.; Schmidt, D.; Schell, Martin; Umbach, A.

doi:10.1364/ofc.2009.omk5

Cited by 28 publications

(19 citation statements)

References 4 publications

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“…If OIF specifications are to be strictly observed (CMRR À20 dBe, Á err AE5 ), only 10 nm (1540-1550 nm) are achieved in the worst case. On the contrary, up to 40 nm (1530-1570 nm) are guaranteed for the nominal design, similar to previously reported experimental results using the same technology [10], [21]. Thus, target specifications are only to be met by all manufactured devices over a 10-nm bandwidth in a real mass production environment, where random deviations across the wafer are unavoidable.…”

Section: Optical Device Level Simulationsupporting

confidence: 84%

“…On the other hand, the worst case optical phase error ð 1 À 4 þ 180 Þ in Section 2 only meets specifications over a 10-nm bandwidth (1540-1550 nm), as opposite to the 37.5 nm (1532.5-1570 nm) provided by the electrical phase error ðÁ err Þ. Although device dimensions are different, our electrical domain results are similar to those experimentally provided in [10] and [21], where the performance of a 4 Â 4 MMI-based 90 optical hybrid manufactured using the same technology is reported.…”

Section: System Level Evaluationsupporting

confidence: 70%

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Dual Photonic Generation Ultrawideband Impulse Radio by Frequency Shifting in Remote-Connectivity Fiber

Beltrán

Llorente

2011

J. Lightwave Technol.

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A numerical study of the impact that manufacturing tolerances have on the performance of an InP 4 Â 4 MMI working as a 90 optical hybrid is presented, including simultaneous variations of width, thickness, and refractive index over the C and L bands. Simulation results for different figures of merit, such as optical common-mode rejection ratios (CMRRs) and phase errors, are provided for both nominal and worst case scenarios. Additionally, system simulations are performed to compute imbalance-induced power penalty. Our results indicate that the combined effect of realistic foundry tolerances on device performance is significant. In particular, a fourfold reduction is predicted between nominal ('40 nm) and worst cases ('10 nm) when optical CMRRs and phase errors are compared against Optical Internetworking Forum specifications. By contrast, a much greater bandwidth is expected at the system level (! 40 nm) if a power penalty of less than 1 dB ð@BER ¼ 10 À3 Þ is to be allowed. In fact, worst case power penalties lower than 0.25 dB are predicted over the full C band, which further proves the great potential of integrated 4 Â 4 MMIs as wide-bandwidth devices for mass production of coherent receivers using state-ofthe-art integration technologies.

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Section: Optical Device Level Simulationsupporting

confidence: 84%

Section: System Level Evaluationsupporting

confidence: 70%

Dual Photonic Generation Ultrawideband Impulse Radio by Frequency Shifting in Remote-Connectivity Fiber

Beltrán

Llorente

2011

J. Lightwave Technol.

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“…• hybrid waveguide for receivers have been studied through various approaches, such as the silica-based planar lightwave circuit which has been widely used for passive waveguides, Silicon-photonics and InPbased monolithic integration technologies [5]- [11]. InPbased monolithic integration technologies have numerous advantages over other approaches, since photonic devices using these technologies, like dual-polarization In-phase and Quadrature (DP-IQ) modulators and photodetectors integrated with a 90…”

Section: Introductionmentioning

confidence: 99%

InP-Based Monolithic Integration Technologies for 100/200Gb/s Pluggable Coherent Transceivers

Yagi

Yoneda

Ekawa

et al. 2017

IEICE Trans. Electron.

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SUMMARYThis paper reports dual-polarization In-phase and Quadrature (DP-IQ) modulators and photodetectors integrated with the 90 • hybrid using InP-based monolithic integration technologies for 100/200 Gb/s coherent transmission. The DP-IQ modulator was monolithically integrated with the Mach-Zehnder modulator array consisting of deep-ridge waveguides formed through dry etching and benzocyclobutene planarization processes. This DP-IQ modulator exhibited the low half-wavelength voltage (V π = 1.5 V) and the wide 3-dB bandwidth ( f 3dB > 28 GHz). The photodetector monolithically integrated with the 90 • hybrid consisting of multimode interference structures was realized by the butt-joint regrowth. A responsivity including total loss of 7.9 dB in the waveguide was as high as 0.155 A/W at a wavelength of 1550 nm, and responsivity imbalance of the In-phase and Quadrature channels was less than ±0.5 dB over the C-band. In addition, the low dark current (less than 500 pA up to 85 • C @ −3.0 V) and the stable operation in the accelerated aging test (test condition: −5 V at 175 • C) over 5,000 h were successfully achieved for the p-i-n-photodiode array with a buried heterostructure formed through the selective embedding regrowth. Finally, a receiver responsivity including intrinsic loss of 3 dB in the polarization beam splitter was higher than 0.070 A/W at a wavelength of 1550 nm through the integration of the spot-size converter, and demodulation of 128 Gb/s DP-QPSK and 224 Gb/s DP-16QAM modulated signals was demonstrated for the compact coherent receiver using this photodetector integrated with the 90 • hybrid. Therefore, we indicated that these InP-based monolithically integrated photonic devices are very useful for 100/200 Gb/s pluggable coherent transceivers.

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“…Consequently, they bring about low production costs and stabilization of receiver performance with mature process technologies [5,6,7,8,9]. In addition, the monolithic integration of the 90°hybrid and photodiodes using butt-joint (BJ) regrowth demonstrated high responsivity operation due to lower optical coupling loss for the BJ coupling structure with the direct connection of the core layer for waveguides from the 90°hybrid and the absorption layer for photodiodes compared with that for the evanescent coupling structure using the singlestep organometallic vapor-phase-epitaxial (OMVPE) growth process [10,11].…”

Section: Introductionmentioning

confidence: 99%

High receiver responsivity and low dark current of InP-based pin-photodiode array monolithically integrated with 90° hybrid and spot-size converter using selective embedding regrowth

Yagi

Inoue

Kikuchi

et al. 2015

IEICE Electron. Express

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The InP-based pin-photodiode array monolithically integrated with a 90°hybrid and spot-size converters was realized using selective embedding regrowth for compact 100 Gb/s coherent receivers. The low dark current of less than 500 pA up to 85°C was attained by InP passivation effect in four-channel pin-photodiodes. As a receiver using these photodiode arrays, a receiver responsivity including total loss of 6.7 dB in the 90°hybrid and intrinsic loss of 3 dB in the polarization beam splitter was higher than 0.060 A/W between −5°C and 85°C through the integration of the spot-size converter. Responsivity imbalance of the In-phase and Quadrature channels was also less than 0.5 dB over the C-band.

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Monolithic 90°Hybrid with Balanced PIN Photodiodes for 100 Gbit/s PM-QPSK Receiver Applications

Cited by 28 publications

References 4 publications

Dual Photonic Generation Ultrawideband Impulse Radio by Frequency Shifting in Remote-Connectivity Fiber

Dual Photonic Generation Ultrawideband Impulse Radio by Frequency Shifting in Remote-Connectivity Fiber

InP-Based Monolithic Integration Technologies for 100/200Gb/s Pluggable Coherent Transceivers

High receiver responsivity and low dark current of InP-based pin-photodiode array monolithically integrated with 90° hybrid and spot-size converter using selective embedding regrowth

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