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In microelectronics, with the trend to decrease dimensions, interconnects suffer from RC delay increase. New materials as porous dielectrics are required, but their integration with copper metallization raises lots of issues. One of the key problems with porous materials comes from the tendency for metallic precursors to diffuse through the porous structure, degrading the electrical properties (e.g., integrated k value) of the dielectric. A possible solution consists in sealing the porosity before metal deposition to prevent any diffusion in the material. In this paper, a new pore sealing technique based on the deposition of a thin a-SiC:H plasma-enhanced chemical vapor deposited (PECVD) dielectric liner is studied and compared to SinormalO2 -based liners. Physicochemical analyses were carried out to demonstrate the capability of these dielectric liners to avoid metallic barrier precursor diffusion into a porous methylsilsesquioxane (k=2.2) using Rutherford backscattering spectroscopy and secondary ion mass spectroscopy. The results are confirmed by transmission electron microscopy coupled with electron energy loss spectroscopy and electrical characterizations on single damascene structures. It is demonstrated that this approach using a thin a-SiC:H liner as pore sealing allows an integrated k value close to 2.2 to be achieved.

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