N-doped GeTe as performance booster for embedded Phase-Change Memories

Engineering of chalcogenide materials for embedded applications of Phase Change Memory

“…In the same graph, data corresponding to conventional GST are also reported for sake of comparison. D-alloy and T-alloy results are among the best so far published on high temperature PCM [5][6][7][8][9][10]. The activation energy for crystallization has been evaluated for both compounds, by finding 3.45 eV and 4.30 eV for D-alloy and T-alloy respectively.…”

“…Several works have recently addressed the limited retention of Phase Change Memory by proposing material engineering or dopants inclusion [5][6][7][8][9][10], but no mainstream has still been found. This paper is focused on two specific compositions in the Ge-rich region, namely D-alloy and T-alloy, whose crystallization temperature is respectively 250°C and 350°C, so definitely higher than reference GST.…”

Pcram

“…It was found that alloys with higher GeTe and lower Sb concentrations are better suited for optical storage at blue wavelengths [19,20]. Similarly, GeTe and doped GeTe PCRAM devices have been reported recently [21][22][23] and were shown to have very fast switching speed and improved data retention because the GeTe rich alloys are characterized by higher crystallization temperature and better stability of the amorphous phase. Ge 2 Sb 2 Te 5 is still the most commonly used material for PCRAM applications, often doped with various materials such as N, O, Sn, SiC, SiO x [24][25][26][27][28].…”

Pulse-induced crystallization in phase-change memories under set and disturb conditions

“…Data show lower E x for the set regime, thus evidencing non-Arrhenius crystallization in PCM. PCM data are compared with thermal annealing data for mushroom cells [5], [15]. The inverse of the kinetic constant k x computed by (6) is also shown (right y-axis).…”