Abs/ruct--This paper compares the important electrical parameters such as forward voltage drop, breakdown voltage, reverse leakage current and the . reverse recovery time under the same operation conditions for different power rectifier diode structures. Such structures include conventional, conventional with an anode mosaic contact and a modified mosaic contact P-i-N diode structures. Based on standard process parameter, the technological, electrical and mixedmode simulation is camed out using the advanced twodimensional (2-D) device, circuit and system simulator, ISE-TCAD and compared to analytical doping profiles simulations showing that such structures are feasible.

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