Stored charge control of P-i-N diodes: a simulation approach

Aldrete-Vidrio, H.E.; Santana, J.; Valle, J.L. Del

doi:10.1109/iccdcs.2002.1004033

Cited by 2 publications

(1 citation statement)

References 11 publications

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“…Here, appropriate values of the ionization-rate parameters A, B, and m are used. [16][17][18] With the presence of a heterojunction, the current densities for electrons, J n , and for holes, J p , are described by:…”

Section: Simulation Resultsmentioning

confidence: 99%

AlGaAs/GaAs NpnP Depleted Optical Thyristor Using Bottom Mirror Layers

Choi¹,

Kim²,

Choi³

et al. 2005

Jpn. J. Appl. Phys.

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A novel fully depleted optical thyristor (DOT) using quarter wavelength reflector stacks (QWRS) is proposed. QWRS are employed as bottom mirrors to enhance the emission efficiency as well as optical sensitivity. To analyze their switching characteristics, s-shapes nonlinear current-voltage curves were simulated and the reverse full-depletion voltages (V neg s) of DOTs were obtained as a function of semiconductor parameters using a finite difference method associated with a currentoriented method. The fabricated DOTs show sufficient nonlinear s-shaped current-voltage (I-V) characteristics, and switching voltage changes with and without bottom mirrors are 1.82 V and 1.52 V, respectively. Compared to a conventional DOT, this device with the bottom mirror shows about 20% and 20-50% enhancement in switching voltage changes and spontaneous emission efficiency, respectively.

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Section: Simulation Resultsmentioning

confidence: 99%

AlGaAs/GaAs NpnP Depleted Optical Thyristor Using Bottom Mirror Layers

Choi¹,

Kim²,

Choi³

et al. 2005

Jpn. J. Appl. Phys.

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Structure design and characteristics analysis of 4H-SiC PiN switching diodes

Zhang

Zhang²,

Zhang³

et al. 2009

2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

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A novel structure of 4H-SiC PiN switching diode with gradual changing doping concentration in n-base region is proposed in order to improve the switching characteristics. The device characteristics are simulated by ISE-TCAD. It is shown that there are about 30% increment in the softness parameters Sand 10% shorter in reverse recovery time tIT, compared with conventional SiC PiN switching diode with constant doping in n-base region. Simultaneously, as the conductivity modulation effect in the n-base region, the forward I-V characteristics are almost invariant.

show abstract

Stored charge control of P-i-N diodes: a simulation approach

Cited by 2 publications

References 11 publications

AlGaAs/GaAs NpnP Depleted Optical Thyristor Using Bottom Mirror Layers

AlGaAs/GaAs NpnP Depleted Optical Thyristor Using Bottom Mirror Layers

Structure design and characteristics analysis of 4H-SiC PiN switching diodes

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