The variation of misfit with composition and temperature in the HgCdTe/CdTe bicrystal system and its effect on the introduction of misfit dislocations are investigated. It is shown that the critical thickness for the introduction of misfit dislocations is of the order of 0.1 μm for Hg‐rich material. Alternative substrate materials to CdTe are considered and the effect of interdiffusion between the substrate and epilayer material on the introduction of dislocations is discussed.
By considering the coupling effect between the direct and converse piezoelectric effects, general expressions are derived for the polarization charge distribution and electric field due to a general dislocation with its line along a 〈110〉 direction in undoped crystals of the sphalerite structure. It is found that there exists a line charge on the dislocation which is in general different from the dangling bond charge. Furthermore, there exists a critical value of this charge for which the dislocation attains a minimum energy configuration in which the radial component of the electric field disappears. The equilibrium polarization charge distributions associated with pure edge and 60° dislocations in undoped GaAs are determined numerically. The effects of these charge distributions on the free carriers in crystals are discussed.
It is shown that 60° and 90° α and β dislocations give rise to piezoelectrically induced charge distributions and electric fields in the surrounding crystal. The general features of the charge distributions are discussed with special references to the relation between the nature of the distributions and the symmetry of the crystal. Finally, it is shown that the dislocation reaction (a0/2)[101̄]+(a0/2)[011]= (a0/2)[110] is self-consistent as regards electrical properties.
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