The introduction of misfit dislocations in HgCdTe epitaxial layers

Abstract

The variation of misfit with composition and temperature in the HgCdTe/CdTe bicrystal system and its effect on the introduction of misfit dislocations are investigated. It is shown that the critical thickness for the introduction of misfit dislocations is of the order of 0.1 μm for Hg‐rich material. Alternative substrate materials to CdTe are considered and the effect of interdiffusion between the substrate and epilayer material on the introduction of dislocations is discussed.

Defect Distribution and Properties of (211) ISOVPE-MCT Films

“…When the thickness is larger than the critical value, misfit dislocations are generated, since the process is energetically favorable [8,9]. The mismatch causes stress and deformation at the interface.…”

Structure quality determination of the Hg 1-x Cd x Te thin films

“…Bragg's law gives M/d=-ctgOL\O for the cubic structure ciystal, the c in vertical direction becomes C =(a/a)=MJd-ctgOe (2) A rocking curve of a heterojunction of Hg1..CdTe/CdTe LPE H-7 oi by liquad phase epitaxy on CdTe(1 1 1) substrate (thickness of epitaxial film is about 4pm) is shown in Fig. 2, (M.-N) set, CuKx(333) reflection, two diffraction peaks appear on the rocking curve due to different lattice parameters of epilayer and substrate, FWFll4 at 90 and 41 arcsec.…”

Interdiffused Multilayer Processing (IMP) in Alloy Growth

“…The problem of lattice mismatch between CdTe, CdSexTe ,x or ZnxCd,-xTe and CdxHg• -xTe has been the subject of discussion by Booyens and Basson [28,29] in LPE growth. In the case of the lower temperature MOVPE growth it would appear that the critical thickness for misfit dislocation introduction originally considered by Matthews [30] is about 0.1opm.…”