The step coverage of a dc planar magnetron sputtering system with a revolving substrate is analyzed by both computer simulation and measurement of the step coverage. The model assumes line of sight deposition, no reemission, and the cosine growth law. Good quantitative agreement has been obtained between the model and the experiments. The modeled system does not show the deep cracks typical of the point source planetary system. This is explained by comparing the vapor distribution functions of the planetary and the sputtering systems.

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Articles you may be interested inStudy of diffusion and quality control for Co Si 2 formation by oxide-mediated cobalt silicidation with Ti capping J. Vac. Sci. Technol. B 23, 1952 (2005); 10.1116/1.2006132Cross-sectional transmission electron microscopy study of the influence of niobium on the formation of titanium silicide in small-feature contacts

Thin Ti films have been deposited on Si 〈100〉 substrates and annealed to form silicide compounds. The annealings were performed in a vacuum rapid isothermal annealing system or in an UHV chamber. Raman spectra were obtained after various processing stages or in situ in the UHV system. The results indicate the simultaneous formation of crystalline Ti2O3 and a Ti silicide tentatively identified as TiSi. Higher temperature annealing to greater than 750 °C leads to the formation of TiSi2 and the disappearance of the Ti2O3 signal.

Measurements of photoconductivity versus intensity and temperature, photoconductivity decay, thermoelectric power versus temperature, and field effect have been extended to several binary amorphous semiconductors: Sb2Te3, As2Te3, As2Se3, and Ge2Te7, to be compared with earlier measurements on As2SeTe2 and Ge3Se2Te4 and more complex multicomponent chalcogenides. Analogous behavior is found in all these materials: about 1019 cm−3 eV−1 localized recombination levels within about 0.1 eV of the gap edges; about 1019 cm−3 eV−1 localized levels near the equilibrium Fermi level; thermally activated mobility with activation energy of the order of 0.1–0.2 eV. Crystallization produces an increase in photoconductivity at 100°K by over a factor of 106.