1983
DOI: 10.1063/1.332414
|View full text |Cite
|
Sign up to set email alerts
|

Step coverage simulation and measurement in a dc planar magnetron sputtering system

Abstract: The step coverage of a dc planar magnetron sputtering system with a revolving substrate is analyzed by both computer simulation and measurement of the step coverage. The model assumes line of sight deposition, no reemission, and the cosine growth law. Good quantitative agreement has been obtained between the model and the experiments. The modeled system does not show the deep cracks typical of the point source planetary system. This is explained by comparing the vapor distribution functions of the planetary an… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

1
17
0

Year Published

1989
1989
2017
2017

Publication Types

Select...
8
2

Relationship

0
10

Authors

Journals

citations
Cited by 68 publications
(20 citation statements)
references
References 4 publications
1
17
0
Order By: Relevance
“…In addition to the low density on the sidewalls, the profile displays large areas of low density in the deep corners of the via. The position of these low-density areas correlates well with the ' 'cracks" displayed by SAMPLE simulations [l] and have been experimentally observed [5]. The step coverage was defined as the thinnest portion of the film divided by the thickness of the film at the simulation edge and was determined to be 24 percent.…”
Section: Discussionsupporting
confidence: 64%
“…In addition to the low density on the sidewalls, the profile displays large areas of low density in the deep corners of the via. The position of these low-density areas correlates well with the ' 'cracks" displayed by SAMPLE simulations [l] and have been experimentally observed [5]. The step coverage was defined as the thinnest portion of the film divided by the thickness of the film at the simulation edge and was determined to be 24 percent.…”
Section: Discussionsupporting
confidence: 64%
“…The radial characteristics of the Cu flux at the substrate are similar to those of the deposition thickness of Cu film measured in Ref. 23. It should be noted that the incident flux of the sputtered Cu atoms corresponds to the thickness of the de- posited film in the case of plane substrate due to the fact that the surface sticking probability of the Cu atoms is close to 1.0.…”
Section: Resultsmentioning
confidence: 78%
“…Furthermore, the PbS CQD film does not contour to the sharp edges of the substrate and is rounded on the top. In addition to the non-conformal PbS film, the ITO is also not completely flat at the bottom of each trench, and is slightly thicker at the centre of the trench than edge, which is caused by shadowing during deposition30.…”
Section: Resultsmentioning
confidence: 99%