Colloidal quantum dots (CQDs) feature a low degeneracy of electronic states at the band edges compared with the corresponding bulk material, as well as a narrow emission linewidth. Unfortunately for potential laser applications, this degeneracy is incompletely lifted in the valence band, spreading the hole population among several states at room temperature. This leads to increased optical gain thresholds, demanding high photoexcitation levels to achieve population inversion (more electrons in excited states than in ground states-the condition for optical gain). This, in turn, increases Auger recombination losses, limiting the gain lifetime to sub-nanoseconds and preventing steady laser action. State degeneracy also broadens the photoluminescence linewidth at the single-particle level. Here we demonstrate a way to decrease the band-edge degeneracy and single-dot photoluminescence linewidth in CQDs by means of uniform biaxial strain. We have developed a synthetic strategy that we term facet-selective epitaxy: we first switch off, and then switch on, shell growth on the (0001) facet of wurtzite CdSe cores, producing asymmetric compressive shells that create built-in biaxial strain, while still maintaining excellent surface passivation (preventing defect formation, which otherwise would cause non-radiative recombination losses). Our synthesis spreads the excitonic fine structure uniformly and sufficiently broadly that it prevents valence-band-edge states from being thermally depopulated. We thereby reduce the optical gain threshold and demonstrate continuous-wave lasing from CQD solids, expanding the library of solution-processed materials that may be capable of continuous-wave lasing. The individual CQDs exhibit an ultra-narrow single-dot linewidth, and we successfully propagate this into the ensemble of CQDs.

Conformal integration of semiconductor gain media is broadly important in on-chip optical communication technology. Here we deploy atomic layer deposition to create conformally deposited organohalide perovskites--an attractive semiconducting gain medium--with the goal of achieving coherent light emission on spherical optical cavities. We demonstrate the high quality of perovskite gain media fabricated with this method, achieving optical gain in the nanosecond pulse regime with a threshold for amplified spontaneous emission of 65 ± 8 μJ cm(-2). Through variable stripe length measurements, we report a net modal gain of 125 ± 22 cm(-1) and a gain bandwidth of 50 ± 14 meV. Leveraging the high quality of the gain medium, we conformally coat silica microspheres with perovskite to form whispering gallery mode optical cavities and achieve lasing.

Colloidal nanoplatelets, quasi-two-dimensional quantum wells, have recently been introduced as colloidal semiconductor materials with the narrowest known photoluminescence line width (∼10 nm). Unfortunately, these materials have not been shown to have continuously tunable emission but rather emit at discrete wavelengths that depend strictly on atomic-layer thickness. Herein, we report a new synthesis approach that overcomes this issue: by alloying CdSe colloidal nanoplatelets with CdS, we finely tune the emission spectrum while still leveraging atomic-scale thickness control. We proceed to demonstrate light-emitting diodes with sub-bandgap turn-on voltages (2.1 V for a device emitting at 2.4 eV) and the narrowest electroluminescence spectrum (FWHM ∼12.5 nm) reported for colloidal semiconductor LEDs.