Reactions of thin-film titanium on silicon studied by Raman spectroscopy

Nemanich, R. J.; Fulks, R. T.; Stafford, B.; Plas, H. A. Vander

doi:10.1063/1.95524

Cited by 39 publications

(5 citation statements)

References 6 publications

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“…There have been several reports concerning the Raman spectra of some of the most important silicides used in Si-based microelectronics as interconnection materials. 1,2 Iridium silicides are of interest for semiconductor device fabrication (far-infrared detectors) and also owing to their thermoelectric transport properties. 3 -5 However, to our knowledge, the Raman spectra of iridium silicides are not available.…”

Section: Introductionmentioning

confidence: 99%

Micro‐Raman study of iridium silicides

Almendra

Rodrı́guez

et al. 2002

J Raman Spectroscopy

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The micro-Raman spectra of three iridium silicides, IrSi, IrSi 1.75 and IrSi 3 , were obtained. The silicides were prepared by rapid thermal annealing of iridium films deposited on Si substrates. The three phases were identified by Rutherford backscattering spectrometry. The main bands observed in the micro-Raman spectra are described in order to provide a simple characterization method for these silicides with high spatial resolution. The three silicides present phonon bands around 165 and 200 cm −1 . Some additional broad bands between 240 and 500 cm −1 were also observed.

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Section: Introductionmentioning

confidence: 99%

Micro‐Raman study of iridium silicides

Almendra

Rodrı́guez

et al. 2002

J Raman Spectroscopy

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“…The growth of the C49 phase proceeds by Si diffusion through the initial silicide layer [4,5] until the Ti overlayer is exhausted, providing a metallic silicide with small lattice misfit with the Si substrate. In order to achieve the low resistivity C54 phase, a structural transition is thermally activated above 700 • C [6,7]. Taking into account the diffusion-driven formation process of TiSi 2 , it is likely that vacancies and interstitials are an important factor, but the precise estimation of the formation energies for such a compound material in contact with a Si reservoir is not a trivial matter.…”

Section: Introductionmentioning

confidence: 99%

Point defects and stacking faults in TiSi₂phases by tight binding molecular dynamics

Iannuzzi¹,

Raiteri

Celino

et al. 2002

J. Phys.: Condens. Matter

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Tight binding molecular dynamics is used to predict the structure and the total energy of the most relevant intrinsic point defects in C54 and C49 TiSi2. The comparison between the relative formation energies of point defects of the two phases in contact with a Si substrate suggests that the metastable C49 form has a higher concentration of point defects. In particular, we point out that Si vacancies and (010) stacking faults should be quite common in the C49 structure. This issue could be important in explaining the kinetic advantage of the latter phase in film growth by solid state reaction.

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“…These include the analysis of doping profiles (19), monitoring of annealing ( 5 ) , and evaluation of residual damage (6) or subsurface damage caused by reactiveion etching (7). Surface modifications including thermal oxidation (1 I), deposited oxides (12), and formation of silicides (8)(9)(10) as well as strain and microadhesion of thin layers have also been studied by Raman spectroscopy (17).…”

Section: Comparison Of Raman Spectroscopy With Other Techniques For Mmentioning

confidence: 99%

“…Gate oxidation (250 nm SiO,), implant through oxide. been shown to have a wide range of applicability for analysis related to both process development and process monitoring (5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16). The technique described in this report makes use of the sensitivity of the Raman spectra to ion implantation damage as a method of monitoring implant parameters before annealing.…”

Section: Introductionmentioning

confidence: 99%

Nondestructive ion-implant monitoring using laser Raman spectroscopy

Wilton¹,

Simard‐Normandin²,

Wong³

1987

Can. J. Phys.

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A new Raman technique for monitoring low-dose ion implants is described. The capability for detection of implants of 20-50 keV B ' (or equivalent BFi energies) at doses as low as -10"' cm ' is of particular interest. Currently, there are few other noncontact, nondestructive methods of evaluating implant doses below 10'' c m ' (e.g., V,-adjust, field, and p-well implants) in patterened production wafers. The feasibility of using the technique for monitoring V,-adjust implants is demonstrated.Low-energy B ' and BF; ion implants in silicon were studied to determine the detection limits of the technique. vmples were analyzed immediately after implantation, without annealing. Implant doses in the range from 3 X 10'' c m --to the detection limit of 3 X 101° cm-' were characterized in this way. The presence of a surface layer of SiOz (5 100 nm thick) did not interfere with the measurements. A tunable laser was used to optimize the sensitivity to implants of different energies.Since the frequency spectrum of Raman scattering can also provide information on the structure of the damaged region or on the distribution of activated boron and residual ion damage after annealing, Raman spectroscopy shows promise in several applications for in situ process monitoring of ion implantation for very large scale integration technology.On prtsente une nouvelle technique Raman qui permet dlCtudier des Cchantillons implant& a faible dose. I1 est particulikrement intCressant de pouvoir dttecter la presence du bore implant6 entre 20 et 50 keV (ou h des Cnergies tquivalentes pour le B G ) avec des doses aussi faibles que 101Ocm-'. Jusqu'i prtsent, il existe peu de mCthodes non-destruetives, ne necessitant aucun contact, qui permettent l'tvaluation d'implantations ioniques sur des pastilles engravtes 21 des doses inferieures 2 10" cm-' (par exemple l'implantation pour l'ajustement de tension de seuil, pour champ ou pour puits-p). La possibilitt d'utiliser cette technique pour mesurer et verifier l'implantation ntcessaire pour I'ajustement de la tension de seuil est dCmontrCe.L'implantation ionique du B+ et du BFJ dans du silicium fut CtudiCe afin de determiner les limites de dttection de la mtthode. Les Cchantillons furent analyses immkdiatement aprks l'implantation, sans recuit. Des doses allant de 3 X 1016 cm-' jusqu'i la limite de dttection de 3 X 1010cm-2 purent ainsi Etre earactCrisCes. La prtsence d'une couche superficielle de SiO' (5100 nm d'tpaisseur) n'affecta pas les risultats de mesure. Un laser 2 longueur d'onde variable fut utilisC afin d'optimiser la sensibilitt de la technique i des implantations d'tnergies diffirentes.Puisque le spectre Raman peut aussi dCvoiler certaines caractCristiques de la structure de la zone endommagee, ou de la distribution des atomes de bore activts et du dommage ionique residue1 aprks recuit, la spectroscopie Raman se montre prometteuse pour diverses applications concemant la vtrification it1 situ du processus d'irnplantation ionique pour les technologies d'intkgration a trks grande ou a ultra gran...

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Reactions of thin-film titanium on silicon studied by Raman spectroscopy

Cited by 39 publications

References 6 publications

Micro‐Raman study of iridium silicides

Micro‐Raman study of iridium silicides

Point defects and stacking faults in TiSi₂phases by tight binding molecular dynamics

Nondestructive ion-implant monitoring using laser Raman spectroscopy

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Reactions of thin-film titanium on silicon studied by Raman spectroscopy

Cited by 39 publications

References 6 publications

Micro‐Raman study of iridium silicides

Micro‐Raman study of iridium silicides

Point defects and stacking faults in TiSi2phases by tight binding molecular dynamics

Nondestructive ion-implant monitoring using laser Raman spectroscopy

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Point defects and stacking faults in TiSi₂phases by tight binding molecular dynamics