ira~i The characteristics and the sensing mechanisms of a new type of solid -state oxygen sensor using LaF3 thin film as solid electrolyte are investigated, with the emphasis on the sensor's characteristic of CuPC thin f i l m for sensor's sensitive electrode materials, CuPC plays a very role in improving the sensor's response The difference on micro-structure and constitdon between LaF3 thin film and pure LaF3 powder is proved by the results of XPS analysis. The LaF3 thin film is micro-crystallized arnd the F element is partially deficiency .The the sensor properties induced by such s predicted and ccm€ormesl by the aF3 ,Oxygen Sensor, Thin Film, XlPS Analysis, R. F. Sputtering of fluorite ion etc., which shows a very good and k t cunductia at room rature[21,their conducting cting electron. The property oftheir high sensitivity to oxygen molecular was fhbricate oxygen sensor. Of these ion rs, LaF3 crystalline has the most ion conductian and stability. Its oxygen consistent can be expressed as ~l l o~g s : sn, SnF2 l p& p , 0, Its sensitivity to oxygen at room becoming increasingly important in many application fields[21. Yam active work on the deve~opment of LaF3 oxygen sensor. In 1984, 12 hours under 2 of different thin f i l m process on LaF3 thin film's microstructure and its ~1~r~i c Fro~erti~s. He R.F. Sputtering and 2. Expe the die to a bulk o f 3 m series of surfsice CuPC or Au was on the substrate smooth surface by * PrrsentAddress: D q y t . ofhhttxials Scimct: C% Engineering
The present issue of physica status solidi (a), guest‐edited by Wolfgang Neumann, is dedicated to Professor Johannes Heydenreich, member of the Advisory and Editorial Board since 1986, on the occasion of his 75th birthday.
The journal cover shows a transmission electron micrograph of a cyclic twinned silver nanoparticle in 〈110〉 zone axis orientation that contains two pairs of stacking faults in one twin segment. The stacking sequence of atomic layers in between twin boundaries 4 and 5 is depicted in a schematic representation below.
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