We investigate the stability, the dynamical properties and melting of a two-dimensional (2D) Wigner crystal (WC) of classical Coulombic particles in a bi-layer structure. Compared to the single-layer WC, this system shows a rich phase diagram. Five different crystalline phases are stable; the energetically favoured structure can be tuned by changing either the inter-layer distance or the particle density. Phase boundaries consist of both continuous and discontinuous transitions. We calculated the phonon excitations of the system within the harmonic approximation and we evaluated the melting temperature of the bi-layer WC by use of a modified Lindemann criterion, appropriate to 2D systems. We minimized the harmonic free-energy of the system with respect to the lattice geometry at different values of temperature/inter-layer distance and we found no temperature-induced structural phase transition.68.65.+g -Layer structures: multilayer, and superlattices 63.20.Dj -Phonon states and bands, normal modes, and phonon dispersion 64.70.Dv -Solid-liquid transitions Typeset using REVT E X

We present a new high-performance configuration interaction code optimally designed for the calculation of the lowest energy eigenstates of a few electrons in semiconductor quantum dots (also called artificial atoms) in the strong interaction regime. The implementation relies on a singleparticle representation, but it is independent of the choice of the single-particle basis and, therefore, of the details of the device and configuration of external fields. Assuming no truncation of the Fock space of Slater determinants generated from the chosen single-particle basis, the code may tackle regimes where Coulomb interaction very effectively mixes many determinants. Typical strongly correlated systems lead to very large diagonalization problems; in our implementation, the secular equation is reduced to its minimal rank by exploiting the symmetry of the effective-mass interacting Hamiltonian, including square total spin. The resulting Hamiltonian is diagonalized via parallel implementation of the Lanczos algorithm. The code gives access to both wave functions and energies of first excited states. Excellent code scalability in a parallel environment is demonstrated; accuracy is tested for the case of up to eight electrons confined in a two-dimensional harmonic trap as the density is progressively diluted up to the Wigner regime, where correlations become dominant. Comparison with previous Quantum Monte Carlo simulations in the Wigner regime demonstrates power and flexibility of the method.

The optical response of hybrid metal-semiconductor nanoparticles exhibits different behaviors due to the proximity between the disparate materials. For some hybrid systems, such as CdS-Au matchstick-shaped hybrids, the particles essentially retain the optical properties of their original components, with minor changes. Other systems, such as CdSe-Au dumbbell-shaped nanoparticles, exhibit significant change in the optical properties due to strong coupling between the two materials. Here, we study the absorption of these hybrids by comparing experimental results with simulations using the discrete dipole approximation method (DDA) employing dielectric functions of the bare components as inputs. For CdS-Au nanoparticles, the DDA simulation provides insights on the gold tip shape and its interface with the semiconductor, information that is difficult to acquire by experimental means alone. Furthermore, the qualitative agreement between DDA simulations and experimental data for CdS-Au implies that most effects influencing the absorption of this hybrid system are well described by local dielectric functions obtained separately for bare gold and CdS nanoparticles. For dumbbell shaped CdSe-Au, we find a shortcoming of the electrodynamic model, as it does not predict the "washing out" of the optical features of the semiconductor and the metal observed experimentally. The difference between experiment and theory is ascribed to strong interaction of the metal and semiconductor excitations, which spectrally overlap in the CdSe case. The present study exemplifies the employment of theoretical approaches used to describe the optical properties of semiconductors and metal nanoparticles, to achieve better understanding of the behavior of metal-semiconductor hybrid nanoparticles.

We describe the valence-band holes of quantum dot molecules formed by two vertically coupled disks, using a four-band k · p Hamiltonian. It is shown that the strong spin-orbit coupling of the valence band introduces characteristic features in the hole tunneling, which are not captured by the usual single-band heavy-hole approximation. Therefore, a treatment of hole states as multiband Luttinger spinors is required. Within this description the parity symmetry in the vertical direction is lost, and chirality symmetry must be used instead. Effects of spin-orbit coupling on the hole and exciton states, as well as on the optical transitions are discussed. We show that, with increasing interdot distance, the spin-orbit interaction leads to a bonding-antibonding ground-state transition and to quenching of the excitonic emission. These results are relevant to recent experiments.J m z ͑k n m z ͒ is the Bessel function of order m z and radial quantum number n. k n m z represents the hole wave vector, de-FIG. 1. ͑Color online͒ Schematic representation of the CQDs under study and the vertical confinement potential V h ͑z͒. CLIMENTE et al.

Free-standing semiconductor nanowires in combination with advanced gate-architectures hold an exceptional promise as miniaturized building blocks in future integrated circuits. However, semiconductor nanowires are often corrupted by an increased number of close-by surface states, which are detrimental with respect to their optical and electronic properties. This conceptual challenge hampers their potentials in high-speed electronics and therefore new concepts are needed in order to enhance carrier mobilities. We have introduced a novel type of core-shell nanowire heterostructures that incorporate modulation or remote doping and hence may lead to high-mobility electrons. We demonstrate the validity of such concepts using inelastic light scattering to study single modulation-doped GaAs/Al0.16Ga0.84As core-multishell nanowires grown on silicon. We conclude from a detailed experimental study and theoretical analysis of the observed spin and charge density fluctuations that one- and two-dimensional electron channels are formed in a GaAs coaxial quantum well spatially separated from the donor ions. A total carrier density of about 3 × 10(7) cm(-1) and an electron mobility in the order of 50,000 cm(2)/(V s) are estimated. Spatial mappings of individual GaAs/Al0.16Ga0.84As core-multishell nanowires show inhomogeneous properties along the wires probably related to structural defects. The first demonstration of such unambiguous 1D- and 2D-electron channels and the respective charge carrier properties in these advanced nanowire-based quantum heterostructures is the basis for various novel nanoelectronic and photonic devices.

We report inelastic light scattering measurements of spin and charge excitations in nanofabricated AlGaAs/GaAs quantum dots with few electrons. A narrow spin excitation peak is observed and assigned to the intershell triplet-to-singlet monopole mode of dots with four electrons. Configuration-interaction theory provides precise quantitative interpretations that uncover large correlation effects that are comparable to exchange Coulomb interactions.

Correlation among particles in finite quantum systems leads to complex behaviour and novel states of matter. One remarkable example is predicted to occur in a semiconductor quantum dot (QD) where at vanishing density the Coulomb correlation among electrons rigidly fixes their relative position as that of the nuclei in a molecule. In this limit, the neutral few-body excitations are roto-vibrations, which have either rigid-rotor or relative-motion character. In the weak-correlation regime, on the contrary, the Coriolis force mixes rotational and vibrational motions. Here we report evidence of roto-vibrational modes of an electron molecular state at densities for which electron localization is not yet fully achieved. We probe these collective modes by inelastic light scattering in QDs containing four electrons. Spectra of low-lying excitations associated to changes of the relative-motion wave function -the analogues of the vibration modes of a conventional molecule- do not depend on the rotational state represented by the total angular momentum. Theoretical simulations via the configuration-interaction (CI) method are in agreement with the observed roto-vibrational modes and indicate that such molecular excitations develop at the onset of short-range correlation.Comment: PDF file only; 24 pages, 7 figures, 2 table. Supplementary Information include

We perform self-consistent Schrödinger-Poisson calculations with exchange and correlation corrections to determine the electron and hole gas in a radial heterojunction formed in a GaAs/AlGaAs core-multi-shell nanowire, which is either n-or p-doped. We show that the electron and hole gases can be tuned to different localizations and symmetries inside the core as a function of the doping density/gate potential. Contrary to planar heterojunctions, conduction electrons do not form a uniform 2D electron gas (2DEG) localized at the GaAs/AlGaAs interface, but rather show a transition between an isotropic, cylindrical distribution deep in the GaAs core (low doping) and a set of six tunnel-coupled quasi-1D channels at the edges of the interface (high doping). Holes, on the other hand, are much more localized at the GaAs/AlGaAs interface. At low doping, they present an additional localization pattern with six separated 2DEGs strips. The field generated by a back-gate may easily deform the electron or hole gas, breaking the sixfold symmetry. Single 2DEGs at one interface or multiple quasi-1D channels are shown to form as a function of voltage intensity, polarity, and carrier type.