2006
DOI: 10.1063/1.2179418
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Full configuration interaction approach to the few-electron problem in artificial atoms

Abstract: We present a new high-performance configuration interaction code optimally designed for the calculation of the lowest energy eigenstates of a few electrons in semiconductor quantum dots (also called artificial atoms) in the strong interaction regime. The implementation relies on a singleparticle representation, but it is independent of the choice of the single-particle basis and, therefore, of the details of the device and configuration of external fields. Assuming no truncation of the Fock space of Slater det… Show more

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Cited by 181 publications
(211 citation statements)
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References 132 publications
(241 reference statements)
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“…First, we diagonalize H e N e and H h N h exactly, following the FCI method described in Ref. 40. The resulting few-electron ͑⌿ N e ͒ and few-hole ͑⌿ N h ͒ states contain an exact description of the intraband correlations.…”
Section: Theorymentioning
confidence: 99%
“…First, we diagonalize H e N e and H h N h exactly, following the FCI method described in Ref. 40. The resulting few-electron ͑⌿ N e ͒ and few-hole ͑⌿ N h ͒ states contain an exact description of the intraband correlations.…”
Section: Theorymentioning
confidence: 99%
“…For small electron numbers N , exact diagonalization (ED), 22,23,24,25,26,27,28,29,30,31,32,33 configuration interaction (CI), 34,35 and stochastic variational methods 36 allow for determining ground and excited state energies and their quantum numbers with high accuracy. For larger N , the size of the many-body basis set increases exponentially.…”
mentioning
confidence: 99%
“…Currently, there are various computational techniques for efficient calculation of the expansion coefficients. [12,[46][47][48][49][50] The calculation requires matrix elements involving the operators { Φ k |O α |Φ k , α = 2, . .…”
Section: B Optimization Of the Trial Wavefunctionmentioning
confidence: 99%