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Epitaxial wide-band gap II–VI beryllium chalcogenide semiconductor films BeTe, BeSe, and BeSeTe were grown on arsenic-terminated silicon substrates. Electrical characteristics of Schottky contacts to the films were measured. Current-temperature measurements at elevated temperatures showed conduction band offsets of 1.2 eV for the BeSe0.41Te0.59/As/Si and 1.3 eV for the BeSe/As/Si heterostructures. At room temperature, the current density through BeSe/Si and BeSe0.41Te0.59/Si films was mid-10−9 A/cm2 at 0.1 MV/cm, similar to previously reported values for ZnS/Si, while BeTe/Si films had orders of magnitude higher current density possibly due to interfacial recombination.

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At temperatures below about 0.3T c , heat is transported through 3He by ballistic quasiparticles. This suggests an interpretation of the exp (-Δ/k T) variation of the effective boundary resistance between 3He-B and the coolant in our experiments. While most quasiparticles generated by a heat source are reflected back by collisions with the walls, a small fraction will disappear into the interstices between the sheets of sinter-coated refrigerant and are reabsorbed. Hence the equilibrium quasiparticle density near the heater should be simply proportional to the heat applied, in approximate agreement with experiment. These ideas are confirmed in experiments with a new cell. Quasiparticles generated at the far end of the sinter channels do not penetrate into the experimental volume, and no thermometer response is observed until the lattice of the refrigerant is heated sufficiently for heat to be transported by the alternative channel of electronic conduction.