The energy balance of small temperature sensors was modelled to illustrate the effects of sensor characteristics, particularly size, on the accuracy of readings in the presence of strong shortwave or longwave radiant loads. For all but extremely small sensors, radiant exchange may lead to unacceptable errors. The common practice of using passively ventilated instrument screens was evaluated in a series of comparative measurements. The differences resulting from the use of different models of shields may be an order of magnitude greater than the error resulting from sensor calibration. In the absence of technological innovation capable of reducing the error due to radiant exchange to negligible proportions, it is suggested that a standard methodology for calibrating and labelling the error resulting from the characteristics of the screens be adopted, to allow comparison of new data with long-established records.
It has been reported that no metal shows a Schottky barrier of less than 0.4 eV on n-type silicon (001). This is attributed to interface states between metal and silicon (001), which pin the interface Fermi level and make the Schottky barrier more or less independent of the metal work function. We demonstrate that, by terminating dangling bonds and relaxing strained bonds on the silicon (001) surface with a monolayer of selenium, low Schottky barriers can be obtained on n-type silicon (001). Aluminum and chromium show barrier heights of 0.08 and 0.26 eV on n-type silicon (001), respectively. These results agree well with the ideal Schottky barrier heights for aluminum and chromium on n-type silicon (001), but are significantly different from the experimental barrier heights known for four decades for these metals on n-type silicon (001).
Analysis of sub-stoichiometric hydrogenated silicon oxide films for surface passivation of crystalline silicon solar cells J. Appl. Phys. 112, 054905 (2012); 10.1063/1.4749415Thermal stability of ohmic contacts between Ti and Se-passivated n-type Si (001)
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