In this paper we show that it is possible using optical photolithography to obtain micron and submicron features for periodic structures in non-contact using the Talbot effect. In order for this effect to work it is important to have good control of the illumination light and here we show that the MO Exposure Optics (MOEO) developed by SUSS MicroOptics provides uniform and well collimated illumination light suitable for Talbot lithography. The MOEO can easily be incorporated into a standard mask aligner. Here we show 1µm and 0.65µm diameter holes in a hexagonal array in photoresist made in large-gap proximity printing.
In this paper we show that using optical photolithography it's possible to obtain submicron features for periodic structures using the Talbot effect. To use the Talbot effect without the need of an absolute distance measurement between the mask and the wafer we integrate over several exposures for varying wafer mask distances. Here we discuss the salient features of 'integrated Talbot lithography'. Particularly, we show that to obtain good contrasts an excellent control of the illumination light is essential; for this we use the MO Exposure Optics (MOEO) developed by SUSS MicroOptics (SMO). Finally we show that 1µm and 0.55µm diameter holes can be made using this technique.
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